Production of Diamond-Like Carbon Films by Plasma Source Ion Implantation
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PRODUCTION OF DIAMOND-LIKE CARBON FILMS BY PLASMA SOURCE ION IMPLANTATION Ling Xie, Frank J. Worzala, John R. Conrad, and Richard A. Dodd Engineering Research Center for Plasma-Aided Manufacturing, 1500 Johnson Drive, University of Wisconsin-Madison, Madison, WI 53706
ABSTRACT In addition to being successfully used for ion implantation, the plasma source ion implantation (PSII) technique has been used to produce diamond-like carbon films. Homogeneous, adherent films were obtained on silicon and stainless steel substrates under 2 kV pulse bias voltages and 50 mtorr methane plasma pressure. Chemical composition analysis was made using Auger electron microscopy. Fretting wear tests and scratch tests were performed to study the tribological and adherent properties. Cross sectional TEM samples were prepared. The interfacial microstrucutres and chemical compositions were analyzed using transmission electron microscopy and scanning transmission electron microscopy. INTRODUCTION Carbon forms a number of crystalline and non-crystalline solids films with very diverse properties. Diamond-like carbon (DLC) films deposited by various techniques have high hardness, chemical inertness to both acids and alkalis, high electrical resistivity, optical transparency over a wide spectral range, and high wear resistance. All these properties make the DLC films ideal candidates as wear-resistant protective coatings for metals and optical or electronic components. For the deposition of "diamond-like" a-C:H films several techniques are appropriate [1]. Common preparation techniques include deposition from hydrocarbon plasma, direct ion-beam deposition and carbon sputtering within a hydrogen atmosphere. Plasma source ion implantation (PSII) is a non line of sight technique for surface modification of materials which is optimized for ion implantation of non-planar targets in nonsemiconductor applications [2-8]. In addition to being successfully used for ion implantation, plasma source ion implantation has been used to produce diamond-like carbon films. In this paper we present the results of investigation of the diamond-like carbon films produced by PSII. EXPERIMENTAL The films were deposited on single crystal Si (100), stainless steel 440C, pure Ni, and Incoloy alloy 908. The substrates were sputtered by Ar+ prior to the deposition. The deposition source gas was methane. The deposition conditions are summarized in Table 1. Under these conditions the plasma was in the glow discharge mode and no filament electron source was needed. Table I Deposition Conditions Bias Voltage 2.0 kV Pulse Width 31 ts Repetition Rate 110Hz Gas Pressure 50 mtorr 2 2.6 jpA/cm Average Current Density Deposition Time 5.5 hours Substrate Temperature
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