Propagation Characteristics of SIW and Waveguide: A Comparison
Substrate-integrated circuit (SIC) technology has provided the most successful solutions for microwave and millimeter wave technology and expected to be the only technology useful in terahertz frequency range. Substrate-integrated waveguide (SIW) has prov
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Abstract Substrate-integrated circuit (SIC) technology has provided the most successful solutions for microwave and millimeter wave technology and expected to be the only technology useful in terahertz frequency range. Substrate-integrated waveguide (SIW) has proved itself the most used guided-wave structure in this technology, but includes one additional loss called leakage loss along with the other two losses found in conventional waveguides, i.e., dielectric loss and conduction loss. In this paper, different losses found in SIWs and conventional waveguides operating in different frequency bands from C band to K band are calculated and compared. It is found that the total losses in SIWs are comparable to that for the waveguides. Propagation characteristics of both the structures are found to be almost same. HFSS software is used to simulate the designed structures. Index Terms Conduction loss · Dielectric loss · Leakage loss · Propagation characteristic · Substrate-integrated waveguide · Waveguide
1 Introduction Microwave-integrated circuits have developed through different generations [1] with betterment in circuit size, density of integration, and low-cost techniques for fabrication. The first generation of the microwave circuits includes waveguides and coaxial lines, which can handle high-power and high-Q structures but are voluminous and bulky. The second generation replaced coaxial cables by printed transmission lines like microstrips lines, striplines, and externally added or surface-mounted active S. Kumari (B) · V. R. Gupta Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi 835215, Jharkhand, India e-mail: [email protected] S. Srivastava Department of Electronics & Communication Engineering, Jaypee Institute of Information Technology, Sector 128, Noida, India © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2021 V. Nath and J. K. Mandal (eds.), Nanoelectronics, Circuits and Communication Systems, Lecture Notes in Electrical Engineering 692, https://doi.org/10.1007/978-981-15-7486-3_50
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Fig. 1 Configuration of a waveguide, b SIW
devices constitute planar microwave-integrated circuits (MICs) and systems. These circuits and systems suffer from severe radiation losses especially at high frequencies and are found inappropriate for high-Q value structures like filters. Further integration and multilayered ceramic processing technique lead to the development of miniature hybrid microwave-integrated circuit (MHMIC), the third generation of the circuits. In these circuits, passive components like MIM resistors and capacitors are constituted and integrated into planar layers during the fabrication process. Next comes the fourth generation, in which both active and passive elements are integrated onto the same substrate. SICs with special synthesized guided-wave structures and planar circuits like microstrip and CPW on the same substrate solved the whole problem of o
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