Properties of Bi-Te-Sb Single Crzystals Grown by the Czochralski Method for Thermoelectric Cooling
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PROPERTIES OF Bi-Te-Sb SINGLE THE CZOCHRALSKI
Lukyan
I.
Anatychuk
Institute
CRZYSTALS GROWN BY
METHOD FOR THERMOELECTRIC
Vladimip A.
Klim
Stanislav
COOLING
A.
Kshevetsky
of Thermoelectricity
Chernovtsy, USSR
Materials
based
on
Bi.Te,Se,Sb and produced
or zone recrystalization oling-But by Czochralski
are used usually method materiales
by pressingextrusion
for the thermoelectric have been far less
Pesearches on growing of monocrystalline ingots binations
on the base of com-
Bi-Se-Te and Bi-Sb-Te have been done by
searches
have been made at
Thermoelectric not essentially
E1,2J.The
same re-
Institute.
our
material
differ
cogrown-
produced from that
by the Czochralski
method does
one grown by zone recrystalization
or Bridgman method. The growing due to rease
single
of
Sb xTe large
Se1
crystals
components evaporation For this
composition
homogeneous
ly high growth speed tals
10-15 mm in
are of any in
Some
increasing
crease
is
in
but no gain
that
technigue
presents
a
Using mm in
in
mobility
figure
create gradi-
approximately
single
the
c-ys-
say,no marked
of merit,have ,
thermal
sufficient-
due to more perfect conductivity
improve-
been obtained. material
coefficient
inseems to
large dimension monocrystal
us
growth
interest100-150 mm long
manufacturing
can be replaced by
to
of merit has been received-It
developments of
and
also
long are grown-These materials
figure
the
by
shields
obtained at
referred technique we've managed
diameter
dec-
the atmosphere of
cm/h-Usually
but,we should in
carrier
practical
the
methods of tes
interest
accompanied
and radiation
gradients
can be
and 50-150 mm
properties,especially
structure
to
acceptable.
crystals
the range of 0.5-1.5
diameter
investigators
ments
to be
single
in
is
large temperature
boundary-Temperature
50-150 K/cm are considered
task
necessary
which quapantee
on melt-monocrvstai Perfect
atmosphere
evaporating Te,Sb,Se
has been produced-it's
conditions
difficulties
the
from crucible.
used,moreover when
such temperature ents
of vapour,so
purpose chemically inert
have been required
meets with certain
elastisity
thermoelectric
the Czochralski
to produce
by the Czochralski materials method-For
ingots
for cooling all
that
30-35
method-Well-known modules
production was-
have been reduced. There
electric
is
one more attractive
modules-The point
feature is
that
for monocrystal well
Mat. Res. Soc. Symp. Proc. Vol. 234.
orientated
usage in
material
1991 Materials Research Society
thermo-
cleavage
198
Table
Area thermopile,mm
I.
Typical Characteristics thermoelectric
Leng, mm
Number of thermopile
I
weak-current batteries.
opt,
Capacity,
A
T max 1300 K, vac.]
W
0.5*0.5
2.7
18
0.3
0.25
68
0-5*0.5
3
112
0.3
1.8
70
0.5*0.5
3
224
0.3
3.6
70
0.5*0.5
3
448
0-3
7-2
70
0.5*0.5
3
100
0.3
1.8
70
0.4*0.4
0.5
400
1.0
24
65
Table 2-Batteries
for TE Generators
Type
Parameters 1.
T
Data Loading...
