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PROTON AND DEUTERON DOUBLE RESONANCE STUDIES OF STRUCTURAL DIFFERENCES BETWEEN AMORPHOUS Si AND Ge FILMS

P. H. Chan, P. A. Fedders and R. E. Norberg, Department of Physics, Washington University, St. Louis, MO 63130 W. Paul, D. Pang, and P. Wickboldt, Division of Applied Science, Harvard University, Cambridge, MA 02138

ABSTRACT Proton and deuteron double resonance methods have been used to study the structure of high quality plasma-deposited a-Si:H,D and a-Ge:H,D films. The micro-structure of the a-Si is dominated by nanovoids with dimension

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