Pulsed DC Magnetron Sputtered Rutile TiO 2 films for next generation DRAM capacitors
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Pulsed DC Magnetron Sputtered Rutile TiO2 films for next generation DRAM capacitors Jithin M.A1, Lakshmi Ganapathi Kolla1, 2, Navakanta Bhat1, 3, S. Mohan1, Yuichiro Morozumi4, and Sanjeev Kaushal5 1
Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India 3 Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India 4 Tokyo Electron Ltd. Minato-ku, Tokyo, Japan 5 Tokyo Electron Santa Clara Labs,Santa Clara, California, United States 2
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ABSTRACT In this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/µm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/µm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.
INTRODUCTION Due to its high density, high speed, and efficient functioning, dynamic random access memory (DRAM) is used as the main memory in every modern computer. The major requirements for the next generation of DRAMs are high capacitance density, low equivalent oxide thickness (EOT
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