Download Metamorphic InAs/InGaAs Quantum Dot Structures: Photoelectric Properties and Deep Levels

Queue processing for download document In(Ga)As quantum dots (QDs) are used in photonic and electronic devices with novel functionalities [1 , 2 , 3 , 4 , 5 ], advanced energy-efficient ‘green’ communication systems with ultra-large bit rate such as energy-efficient lasers [6 , 7 ] and QD opti

You can start your download in 30 seconds

Recommend Documents
Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures

197 35 134KB

Interdiffusion in Semiconductor Quantum Dot Structures

195 82 332KB

Electrical Properties, Deep Levels Spectra and Luminescence of Undoped GaN/InGaN Multi-quantum-well Structures as Affect

175 16 50KB

Exciton characteristics and exciton luminescence of silicon quantum dot structures

199 16 317KB

Photophysics of Titania Nanoparticle/Quantum Dot Hybrid Structures

201 72 689KB

Room-Temperature Defect Tolerance of Shape Engineered Quantum Dot Structures

165 102 74KB

Metamorphic materials for quantum computing

189 25 797KB

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.

177 22 375KB

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.

196 66 233KB

Quantum Dot Lasers and Amplifiers

293 51 525KB

Quantum Dot Lasers and Amplifiers

223 61 277KB

Quantum Memories: Quantum Dot Spin Qubits

227 24 5MB