Quantitative Structural and Chemical Analysis of Thin Films: Part I
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Structural and Chemical Analysis of Thin Films Parti
Y. Bruynseraede and Ivan K. Schuller, Guest Editors Thin-film materials are playing an everincreasing role in basic and applied research and are the basis for a large number of devices. In many cases, thin films are used in multilayered configurations so that the interfaces between different materials play a key role in their properties. The thicknesses of thin films being investigated approach interatomic spacing, so interfacial structure and chemistry become dominant. The field is now at a stage where it is no longer sufficient to only obtain qualitative information; it is also necessary to understand the structure and chemistry quantitatively and to determine limits on the
Yvan Bruynseraede, Guest Editor for this issue of the MRS Bulletin, is a professor in the Department of Physics at the Katholieke Universiteit (Leuven, Belgium) where, over the past 10 years, he has developed a sizeable research program focused principally on low and high Tu superconductivity, magnetic interactions, electron localization and metal/insulator transitions in thin films, multilayers, and mesoscopic systems. Bruynseraede is a member of the Belgian Academy of Sciences, and is past presi-
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accuracy of the various characterization tools. The present and next issues of the MRS Bulletin bring together a number of experts in the most commonly used characterization tools. To highlight and encourage international collaboration, the articles presented here are jointly written by scientific groups in the United States and Europe. The first issue of this series is dedicated to the most commonly used techniques: electron microscopy, x-ray diffraction, and surface analysis. The article on electron diffraction by Ourmazd, Scheff ler, Heinemann, and Rouviere presents studies of
dent of the Belgian Physical Society, chairman of the Low Temperature Section of the European Physical Society, and coordinator of the Interdisciplinary Center for Superconductivity in Leuven. Ivan K. Schuller, Guest Editor for this issue of the MRS Bulletin, is a professor of physics at the University of California-San Diego and a special term appointee at Argonne National Laboratory. He received his Licenciado en Ciencias from the
University of Chile and his
atomic resolution microscopy and their limitations. Aspects highlighted are the importance of comparing simulations to the images obtained in the electron microscope, and the importance of theoretical studies to obtain quantitative information. The article by Fullerton, Bruynseraede, and Schuller describes recent developments in the field of x-ray diffraction. This article focuses on a refinement technique capable of quantitative determination of interfacial roughness, interdiffusion, and crystal structure changes in a variety of novel multilayer configurations. The article by Slaughter, Weber, Giintherodt, and Falco concentrates on the use of surface analytical techniques such as Auger and x-ray photoelectron spectroscopies during growth or combined with
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