Radiation Defect Study in the P-Type Copper Selend
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RADIAT1ON DEFECT STUDY IN THE P-rYPE COPPER SELEIND. Marchuk.N.D.
and Dolgolenko, A.P.
Institute for Nuolear Researoh,Aoademy of Sciences of the Ukrainian SSR,Kiev,USSR Abstract P-Cu 2 6Se(6=0.025)
samples,self-doped through a departure from the and cadmium-doped up to
stoiohiometry(po= 4.8-1020)
were studied in the course of their irradiation in a
po= 5.6-1020cm-2 reaotor up to temperature
a concentration
a fluance
n-om- 2
of
fast
dependence
of
the resistivity and
of -6-10 2
of -500-550 C
.
The
described in
thermo-emf on the fast neutron fluenoe is
at a
neutrons
terms of the
theory of effective medium and representation of defect clusters as dielectric
inclusions
in
a
of p-Cu.Se(Cd)
oonduoting matrix
and
p-Cu 2 _6Se samples.
X
Defect clusters of a mean radius of -27 only because of scattering of the
are shown to appear not
fast pile neutrons on copper and
but also due to a nuclear reaction '"Cd(n,r)'"Cd
selenium atoms,
thermal neutrons with an efficiency
of 3.43
om--.
Increase
on
of the
conductivity in the process of the reactor irradiation of p-Cu 2 __Se at small fluenoes of fast neutrons and appearance of a whitish deposit of selenium
on
the
surface
of
samples
after
high
fluences
of
fast
neutrons were observed. Introduction Studies of p-Cu 2 Se are at present receiving [1-3],
as it
is
special
one of promising thermoelectric materials,
attention where the
carrier concentration can be varied over a broad enough range though
varyiing the stAihi.•me Struotural
features
.•rnL,&,sit,.n. of
the
copper
selenide
speoifically of its high-temperature a-phase,
crystal
make this material an
interesting object for studying the effect of disordering on and kinetic coefficients.
Such an interest
lattice,
electric
can be harnessed by the
Mat. Res. Soc. Symp. Proc. Vol. 234. @1991 Materials Research Society
228
which studies the changes
radiation physics,
in the eleotrophysioal
properties of various materials in the course of irradiation capable of producing a lattice disordering. As known,
fast pile neutrons can produce defect clusters where the
increase in the carrier
defect concentration can be considerable,
Therefore,
in
concentration
is
concentration raising the defect concentration [4,5]. our
opinion,
relation
the
between
the
defeat
undoubtely of interest within the scope of the problem of the material
resistance to radiation. Experimental Copper selenide Cu,2 6 Se is a self-doping semiconductor compound where a high carrier (hole) concentration arises due to a departure of the composition of the compound (6) from stoiohiometry and which also Samples were prepared by
the doping with such an impurity as cadmium.
extrusion. The carrier concentration was of 4.8.1020(6=0.025) a self-doping sample (I) (II);
where
transition,
the hole
concentration was
acoustic
of
the
phonons,where 6
relation mdP/mo= .10-'T
0
'
relation
determined from
zone
and
the
thermo-emf
transition on
the
scattering
on
carrier of
mass
e
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