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and PE-VLPCVD[6] processes with growth rates of less than 100/i/min. Those techniques have such critical requirements as pre-deposition of l0nm of pure Si on the oxide to avoid the long incubation times or roughening the oxide surface by plasma-sputtering prior to the SiGe deposition. Both approaches may degrade the device performance by changing the work function of the gate and/or increasing the traps in the oxide. In this paper, a rapid thermal chemical vapor and a higher growth rate deposition reactor is used to achieve a high germanium content (84%) (>1000A/min) of the SiGe films at very low temperatures (< 6250 C). In addition, this work explores the deposition of poly SiGe films on the oxide using an in-situ polysilicon flash technique to form nucleation seeds on the oxide surface. The polysilicon flash technique results in an extremely thin layer of silicon on the oxide (