Reduced contact resistance in organic field-effect transistors fabricated using floating film transfer method
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Reduced contact resistance in organic field‑effect transistors fabricated using floating film transfer method Kshitij Bhargava1 · Nidhi Yadav1 · Nikita Kumari2 · Shyam S. Pandey2 · Vipul Singh1 Received: 10 May 2020 / Accepted: 23 July 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract This paper presents an in-depth performance-based comparison of organic field-effect transistors (OFETs) prepared using the conventional spin coating (SC) technique and a recently developed floating film transfer method (FTM). A remarkable improvement in the performance of transistors fabricated using FTM was achieved in comparison to their SC counterparts. The estimated value of width-normalized contact resistance in FTM-based OFETs was an order lower in comparison to that of transistors prepared using SC technique. The observed results were credited to a significant enhancement in the length of π-conjugation due to the presence of edge-on oriented polymer chains of active layer deposited using FTM, leading to the lowering of carrier injection barrier at the Au/P3HT interface. These results were well supported through absorption, photoluminescence and Raman measurements as well as the anisotropy measurements using polarized absorption spectra, which also pointed towards the improvement in the polymer chain alignment of thin films prepared by FTM over that prepared by the conventional SC technique. The results indicate thin film morphology as a key towards reducing the contact resistance in OFETs.
1 Introduction Conjugated polymer-based electronic devices have gone through extensive research in recent past courtesy to their lucrative features like ease of processing, light weight, flexibility, cheaper and large-area based applications [1–4]. Conventional devices based on polymeric semiconductors like solar cells, light-emitting diodes, field-effect transistors have achieved the appreciable levels of performance comparable to those fabricated using amorphous silicon (a-Si). The organic field-effect transistors (OFETs) find application products like RFIDs, displays, light-emitting devices, photosensors, chemical and biological sensors [5–12]. In OFETs, the interfacial morphology of polymeric active
* Vipul Singh [email protected] 1
Molecular and Nanoelectronics Research Group (MNRG), Discipline of Electrical Engineering, Indian Institute of Technology Indore, Simrol Campus, Khandwa Road, Indore, Madhya Pradesh 453552, India
Department of Biological Functions and Engineering, Graduate School of LSSE, Kyushu Institute of Technology, 2‑4 Hibikino Science and Research Park, Wakamatsu, Kitakyushu, Fukuoka 8080196, Japan
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layer, which depends on parameters like regioregularity, deposition method, annealing and boiling point of solvent, critically affects their performance [13–19]. Therefore, further improvisation of OFET functionality can be achieved by morphological improvement of polymer films. In polymeric OFETs, the length of π-conjugation and disorder present inside the polymer layer governs
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