Reply to the comments of A. Gauzzi and D. Pavuna
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Reply to the comments of A. Gauzzi and D. Pavuna Bruce John Kellett Department of Materials Science and Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0012 Jonathan Horton James Oxford Instruments, Thin Films Group, Newton House, Cambridge Business Park, Cambridge, CB4 4WZ, United Kingdom (Received 5 May 1995; accepted 23 June 1995)
We thank Dr. A. Gauzzi and Dr. D. Pavuna for bringing to our attention their comments on our article "Ion beam sputter deposition of YBa2Cu3O7~g," as it gives us the opportunity to clear up some discrepancies, make more explicit some of the results, and correct unintended misunderstandings.
In the first part of their letter, Gauzzi and Pavuna are primarily concerned with the relative merits of single and multiple ion beam techniques. The paper was intended as a comparative review of various combinations of the four ion beam deposition system at the Institute of Micro and Optoelectronics at EPFL, Switzerland. As such, the article discussed and referenced the works of Gauzzi et al.] concerning lower energy single ion beam sputtering. The article was not intended to present new results or present multitarget deposition as an improvement over the single-target technique. Indeed no statement is made in the paper that multiple-target ion beam sputtering is an improvement on single-target techniques. Further, the inherent simplicity of single ion beam sputtering is far from disputed and was stated as such in the paper (Sec. III. C). Moreover, the authors would recommend single ion beam sputtering to prospective researchers in the field. The comparative simplicity of single ion beam techniques when compared with the complexity of maintaining three or even four ion beams during deposition is self-evident. We do not disagree with the findings of Gauzzi and Pavuna that stoichiometric sputtering of YBCO can be achieved at low beam energies and sputtering rates. We take this opportunity to specifically acknowledge that full credit should be awarded to Dr. Gauzzi and Dr. Pavuna for this contribution to the field of ion beam sputtering. We would only add that deposition rates at these sputtering energies (
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