Reversible Multi-level Resistance Switching of Ag-La0.7Ca0.3MnO3-Pt Heterostructures
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0997-I07-13
Reversible Multi-level Resistance Switching of Ag-La0.7Ca0.3MnO3-Pt Heterostructures Dashan Shang1, Lidong Chen2, Qun Wang2, Zihua Wu1, Wenqing Zhang1, and Xiaomin Li1 1 Shanghai Institute of Ceramics, Chinese Academy of Sciences, No. 1295, Dingxi Road, Shanghai, 200050, China, People's Republic of 2 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China, People's Republic of ABSTRACT Resistance random access memory (RRAM) has attracted intense attention in recent years for the potential application as nonvolatile memory. One of the tempting properties of RRAM is the multi-level memory, in which several resistance states can be obtained and each of them can be used to save information. In this paper, the electric-pulse-induced multi-level resistance switching of the Ag-La0.7Ca03MnO3-Pt heterostructures was studied. The multi-level resistance switching (MLRS) was observed in the switching from high to low resistance state (HRS LRS) by applying electric pulse with various pulse voltages. The threshold pulse voltages of MLRS are related to the initial resistance values as well as the switching directions. On the other hand, the resistance switching behavior from low to high resistance states (LRS HRS) shows unobvious MLRS. MLRS was explained by the parallel effect of multi-filament forming/rupture in the Ag/La0.7Ca0.3MnO3 interface layer. The present results suggest a possible application of Ag-La0.7Ca03MnO3-Pt heterostructures as multi-level memory devices.
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INTRODUCTION With the development of digital technology, there is a need for new memory, which is lower costs, lower power consumption, non-volatile and easy to integrate into existing CMOS technology. For satisfying this requirement, different advanced memory technologies like magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), ovonic unified memory (OUM) or polymer devices have been investigated for decades.1-4 In recent years, a new concept, resistance random access memory (RRAM) has been presented.5 That means the resistance of materials used as the memory device can be changed by several orders of magnitude induced by electric pulses under room temperature. The resistance change is fast (State-2>State-3>State-4. State-1, State-2 and State-3 were defined as HRS in HRS LRS, while State-2, State-3, State-4 were defined as LRS in LRS HRS. The results of EPIR switching of each states show that both VH-L and VL-H increased with the initial value increasing, as shown in Fig.4e and 4f. This trend is contrary to MLRS in one unit (see Fig. 2), indicating that the filament extension or connection in length direction can not explain MLRS in Ag-LCMO-Pt heterostructures.
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