Robust resistive switching performance of pulsed laser deposited SiC/Ag/SiC tri-layer thin films deposited on a glass su
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Research Letter
Robust resistive switching performance of pulsed laser deposited SiC/Ag/SiC tri-layer thin films deposited on a glass substrate Koppole Kamakshi, Department of Science and Humanities, Indian Institute of Information Technology Tiruchirappalli, Tiruchirappalli, Tamil Nadu 620015, India J.P.B. Silva, Centre of Physics, University of Minho, Campus de Gualtar, Braga 4710-057, Portugal N.S. Kiran Kumar and K.C. Sekhar , Department of Physics, School of Basic and Applied Sciences, Central University of Tamil Nadu, Thiruvarur 610101, India M. Pereira, Centre of Physics, University of Minho, Campus de Gualtar, Braga 4710-057, Portugal Address all correspondence to K.C. Sekhar at [email protected] (Received 28 March 2020; accepted 5 May 2020)
Abstract In this work, the authors developed SiC(10 nm)/Ag/SiC(10 nm) thin films showing an electroforming-free resistive switching (RS) effect with a switching ratio of 102. The observed RS effect is attributed to charging and discharging of Ag nanoparticles in the film layer. Further, SiC/Ag/ SiC film shows an excellent endurance and retention as well as a good thermal stability of RS characteristics. It is also identified that the switching ratio is invariant but the switching voltage of the device greatly depends on the Ag nanoparticles concentration and the operation temperature of the device. Therefore, SiC/Ag/SiC thin films are attractive for next-generation memory devices with enhanced durability.
Introduction Today’s traditional memory devices are failing to meet the industry demands, such as lower power, lower latency, higher density, higher bandwidth, sustainable scaling, and lower cost, leading to the development of attractive alternatives, such as resistive random access memories (ReRAMs).[1] As ReRAMs offer high switching speed, simple cell structure, small cell size, high durability, and multi-state switching, they are considered as potential candidates for next-generation nonvolatile memories.[2,3] Several types of materials, such as amorphous Si, solid-state electrolytes, perovskite-type oxides, binary metal oxides, and organic compounds, have been investigated for ReRAM applications.[2–6] Compared to oxide materials, nonoxide-based ReRAMs are attracting significant attention due to their low operating current/voltage, fast program operation, and good compatibility with the existing complementary metal-oxide semiconductor (CMOS) technologies for the device fabrication.[7] However, for practical device applications, a material with high switching ratio, high retention, endurance, stability with temperature, and controlled reproducibility is essential. In view of this, several carbide and nitride-based materials have been considered for the ReRAM applications.[7,8] In recent years, the employment of silicon carbide (SiC) in ReRAM devices has triggered a great interest due to its high switching ratio and an excellent data retention besides its unique physical and chemical properties such as wide bandgap, high thermal conductivity, stability in harsh envi
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