Room temperature ferromagnetism in chemically synthesized dilute magnetic semiconducting (In 0.95 Mn 0.05 ) 2 O 3 nanopa
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Room temperature ferromagnetism in chemically synthesized dilute magnetic semiconducting (In0.95Mn0.05)2O3 nanoparticles Bhakti Pada Das1,* , Akash Oraon1, Tapan Kumar Nath2, Tapasendra Adhikary1, Shampa Aich1, and Panchanan Pramanik3 1
Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, Kharagpur 721302, India Department of Physics, Indian Institute of Technology, Kharagpur, Kharagpur 721302, India 3 Department of Chemistry, GLA University, Mathura, UP 281406, India 2
Received: 23 August 2020
ABSTRACT
Accepted: 1 November 2020
Single-phase nanocrystalline In2O3 doped with 5 atomic percent Mn produces dilute magnetic semiconductor (DMS). The material is synthesized by low temperature ‘pyrophoric reaction’ using nitrate salts and diethanolamine. The XRD pattern at room temperature reveals the formation of cubic bixbyite structure of the oxide with nano-structured grain which is confirmed by FESEM. Magnetization data confirms ferromagnetic behavior at room temperature with gradual decrease in magnetization with rise of temperature. The phase transition occurred at 500 K is attributed to the transformation of ferromagnetic to paramagnetic state of the nanometric sample. Curie–Weiss inverse magnetic susceptibility [v-1(T)] plot against temperature deduced the effective Bohr magneton (leff) to be * 3.65 lB/Mn ion. Ferromagnetism may have generated from mixed valence states (Mn4?major /Mn3?minor) of Mn which is 3d element. Valence state was determined by chemical method using redox reaction between Fe2?and Mn4?/ Mn3?.
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1 Introduction A dilute magnetic semiconductor (DMS) is composed of semiconductor doped with one or more types of magnetic ions preferably transition metal (TM) (few atomic percent) which influences its’ remanent magnetization and influences spin of carriers [1]. It is an outcome of the constant efforts made by a large number of scientists where spin properties of the
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https://doi.org/10.1007/s10854-020-04814-5
charge carriers have been exploited to develop a new kind of materials known as spintronics. Spintronic systems exist more often in dilute magnetic semiconductor with a high TC (transition temperature/ Curie temperature) above room temperature (RT) [2–5]. Classification of dilute magnetic semiconductor is made with the help of some of their basic characteristics such as the interaction between the d shell and conduction band electrons and their band gap.
J Mater Sci: Mater Electron
II–VI group semiconductors such as ZnO, CuO, ZnSe, ZnS, CdS, ZnTe etc. possess wide band gap are considered as good candidates for DMS materials when these materials usually doped with one or more transition metals or rare earth ions. Besides II–VI group semiconductors there are other groups of semiconductors namely IV–VI and III–V types which are doped with different types of magnetic and nonmagnetic ions. Doping of transition metals and
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