Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors
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SELECTIVE AREA DEPOSITION OF EPITAXIAL FILMS OF II-VI
INSULATORS, PASSIVANTS, COMPOUND SEMICONDUCTORS
AND
D.L. DREIFUS*, Y. LANSARI**, J.W. HAN", S. HWANG**, J.W. COOK, JR.**, AND J.F. SCHETZINA** * Department of Electrical and Computer Engineering, North Carolina State University, Raleigh NC 27695-7911 ** Department of Physics, North Carolina State University, Raleigh NC 27695 ABSTRACT and insulators, II-VI semiconductor surface passivants, epitaxial films have been deposited onto selective surface areas The II-VI technique. by employing a new masking and lift-off layers were grown by either conventional or photoassisted CdTe has been selectively deposited molecular beam epitaxy (MBE). Selectiveonto HgCdTe epitaxial layers as a surface passivant. metal-insulatorarea deposition of ZnS has been used in Low resistance ohmic contacts to semiconductor (MIS) structures. p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a Epitaxial layers of HgTe, HgCdTe, and thermal evaporation of In. HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and doublecrystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds. INTRODUCTION Selective-area deposition of surface passivants, insulators, and epitaxial films of II-VI semiconductors offers a new approach for the fabrication of a number of devices such as metalinsulator-semiconductor device structures, multicolor detectors, integrated optoelectronic circuits, and waveguide structures. often The performance of Hg-based infrared detectors is dependent on the type and quality of the surface passivation. Although it is fairly straightforward to complete an epitaxial growth with a passivating layer, once the sample has been removed from the growth system, patterned, and etched, the mesa edges When mesa etching is followed by a blanket remain exposed. deposition of a passivating sulfide or oxide layer, subsequent device fabrication can become difficult if contact vias to the would be Ideally, it underlying semiconductor are desired. desirable to selectively place surface passivation only on sensitive surfaces rather than of blanket depositions that can require additional processing steps and selective etchants in The same requirements hold order to obtain electrical contacts. true for insulators in MIS structures and interlevel metal dielectrics. Providing that subsequent depositions do not appreciably affect previously grown epitaxial layers, selective-area epitaxy perhaps the ideal choice for the of device structures is integration of the various components for an optoelectronic the growth conditions for technology. Frequently, circuit specialized layers used in optical or electronic devices are grown conditions. set of optimized deposition under a varied
Mat. Res. Soc. Symp. Proc. Vol. 161. 01990 Materials Research Society
160
Unfortunately, the selective-area epitaxy of silicon or GaA
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