Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces
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Elizabeth A. Paisleyb) Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
H. Spalding Craft, Peter G. Lam, Edward Sachet, Seiji Mita, Ramon Collazo, Zlatko Sitar, and JonPaul Maria Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA (Received 24 June 2015; accepted 9 October 2015)
Selective area growth of thin films reduces the number of steps in microfabrication processing and enables novel device structures. Here, we report, for the first time, selective area epitaxy of an oxide material on a GaN surface. Chlorination of the GaN surface via wet chemical processing is found effective to disrupt Mg adsorption and selectively prevent molecular beam epitaxy growth of MgO. MgO films grown on neighboring, nonchlorinated surfaces are epitaxial with a (111) MgOjj(0001) GaN crystallographic relationship. Better than 3 lm lateral resolution for the selective area growth of MgO on GaN is demonstrated.
Mark D. Losego is an Assistant Professor of Materials Science and Engineering at Georgia Tech. He received his B.S. from Penn State in 2003 and his M.S. (2005) and Ph.D. (2008) from NC State, all in materials science. Prior to joining the faculty at Georgia Tech in 2014, he conducted postdoctoral research in nanoscale heat transport at the University of Illinois and led investigations into solar fuels as a research faculty at NC State. Currently, his research group has interests in advanced materials synthesis for renewable energy, national security, and microelectronics applications. The research presented here originates from a series of “failed” experiments conducted during Prof. Losego’s Ph.D. studies. During a 6 mo period, research nearly halted because MgO films could no longer be grown on GaN surfaces above 250 °C. Through persistence, detailed documentation, and careful observation, Prof. Losego discovered that a simple change in the order of the surface cleaning steps had prevented the film growth. It is hoped that this example of “success through failure” will motivate current and future graduate students as they navigate through the inevitable struggles of their research careers. Mark D. Losego
Elizabeth A. Paisley is a postdoctoral researcher at Sandia National Laboratories in the Electronic, Optical, and Nano Materials Department. She received her B.S. in 2008 and her Ph.D. in 2012 from North Carolina State University, both in Materials Science and Engineering. Before her work at Sandia, Elizabeth spent two years studying growth and characterization of AlN, GaN, and AlGaN alloys on native AlN substrates at HexaTech, Inc. for UV-C LED applications. Currently, in her postdoctoral research she focuses on oxide thin film research for GaN and AlGaN power electronics.
Elizabeth A. Paisley
I. INTRODUCTION Contributing Editor: Cewen Nan a) Address all correspondence to this author. e-mail: [email protected] b) These authors contributed equally to this work. DOI: 10.1557/jmr.2015.332
Lateral patterning of thin films is essential for the fabricatio
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