Semiconductor Nanolasers
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compound semiconductors. Chapter 8 chronicles the property changes introduced by quantum wells and their applications. The importance of strain as a design parameter for changing the band structure and its influence on the critical thickness are covered next in chapter 9. Chapter 10 describes the methods of synthesizing quantum wells, wires, and dots. Group III nitrides are distinctive enough to have their own chapter; the challenges of doping, forming ternary alloys in the nitride system, and the implications of polarization and piezoelectricity are described in chapter 11. The final section, chapters 12 and 13, is on devices at which compound semiconductors excel due to their direct bandgaps and high carrier mobilities. These include optoelectronic devices, such as
Semiconductor Nanolasers Qing Gu and Yeshaiahu Fainman Cambridge University Press, 2017 332 pages, $155.00 (e-book $124.00) ISBN 9781107110489
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his introduction to the growing literature on nanolasers is self-contained, and sufficiently user-friendly to appeal to an intended audience that includes “graduate students, researchers and professionals in optoelectronics, photonics, applied physics, nanotechnology and materials science.” That broad reach is evident in the Introduction, which begins with a history of laser miniaturization and the fundamentals of laser action, and then uses the evolution of the microscale vertical-cavity surfaceemitting laser (VCSEL) to highlight the challenges in photonic materials and optoelectronics found in photonic crystal defect-cavity lasers, nanowire, cavity-free and metal-dielectric-metal (MDM) lasers, and coherent sources based on surface plasmon amplification. Succeeding chapters explicate critical technical issues in these nanolaser types, and cover optical cavity design, optimization of the principal mode structures, and
operation of coaxial and MDM nanolasers in optical and plasmonic modes. Chapters 2, 4, and 5 cover nanolasers that incorporate metallic elements in photonic and plasmonic modes or as antennas to shape output radiation patterns. Chapter 7 covers electrically pumped nanolasers and analyzes indium phosphide devices. The focus on optical design and performance is complemented in chapter 8 by a detailed multiphysics design study of the thermal, electrical, and materials design issues for nanolasers. Chapters 9 and 10 deliver stimulating excursions into the realms of cavity-free lasers and inversionless exciton-polariton lasers. The concluding chapter acknowledges that the engineering maturity or technological readiness of nanolasers requires a discussion of the emerging potential of nanolasers, rather than specific applications, in the context of integrated photonics platforms and waveguides. This recognizes that the technological utility of nanolasers
light-emitting diodes, laser diodes, and solar cells, and electronic devices, especially field-effect transistors and heterobipolar transistors. This could be used as a textbook, as questions are included at the end of each chapter. There are a few
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