Si-V (Silicon-Vanadium)
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upplemental Literature Review: Section III
Si-V (Silicon-Vanadium) H. Okamoto
The Si-V phase diagram in [Massalsi2] was redrawn from [1985Smi]. [2007Zha] noticed that the eutectoid decomposition temperature of V6Si5 shown at 1160 °C in [1985Smi], which was quoted from [1985Sto], was actually 1160 K (887 °C). A further investigation by [2007Zha] using x-ray powder diffraction indicated that the decomposition temperature of V6Si5 is below 500 °C. Figure 1 shows the Si-V phase diagram calculated by [2008Zha]. The experimental data points used in the modeling were nearly the same as those used by [1985Smi], but a few additional experiments were carried out to clarify ambiguous areas. Table 1
Table 1 shows Si-V crystal structure data given by [1985Smi]. The composition range of phases was modified in accordance with Fig. 1.
References 1985Smi: J.F. Smith, The Si-V (Silicon-Vanadium) System: Addendum, Bull. Alloy Phase Diagr., 1985, 6(3), p 266-271 1985Sto: E.K. Storms and C.E. Myers, Thermodynamics and Phase Equilibria in the Vanadium-Silicon System, High Temp. Sci., 1985, 20, p 87-96
Si-V
Phase
Composition, at.% V
Pearson symbol
Space group
Strukturbericht designation
Prototype
(Si) Si2V Si5V6 Si3V5 SiV3 (V)
0 33.3 55 62.5 74.5-80.1 95.2-100
cF8 hP9 oI44 tI32 cP8 cI2
Fd 3m P6222 Immm I4/mcm Pm3n Im3m
A4 C40 ... D8m A15 A2
C (diamond) CrSi2 Nb6Sn5 W5Si3 Cr3Si W
Weight Percent Vanadium 0
10
20
30
50
40
60
90
100
1987°C
2000
1914°C
L 1683°C
1600
1910°C
89.1
80.1
1837°C
95.2
(V)
1667°C 42.4
1414°C 1400
SiV3
1921°C
1800
1631°C
1395°C 5.3
Si5V6
1000
(Si) 800
Si3V5
1200
Si2V
Temperature,°C
80
70
600 459°C
400 0 Si
10
20
30
40
50
60
70
80
Atomic Percent Vanadium
90
100 V
Fig. 1 Si-V phase diagram
Journal of Phase Equilibria and Diffusion Vol. 31 No. 4 2010
409
Section III: Supplemental Literature Review 2007Zha: C. Zhang, J. Wang, Y. Du, and W. Zhang, An Investigation on the Thermodynamic Stability of V6Si5, J. Mater. Sci., 2007, 42, p 7046-7048
410
2008Zha: C. Zhang, Y. Du, W. Xiong, H. Xu, P. Nash, Y. Ouyang, and R. Hu, Thermodynamic Modeling of the V-Si System Supported by Key Experiments, Calphad, 2008, 32, p 320-325
Journal of Phase Equilibria and Diffusion Vol. 31 No. 4 2010
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