Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition
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Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition Charles W. Teplin, Eugene Iwaniczko, Kim M. Jones, Robert Reedy, Bobby To, Howard M. Branz National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401 ABSTRACT We have studied silicon films grown epitaxially on silicon wafers using hot-wire chemical vapor deposition (HWCVD) with a tantalum filament. Silicon films were grown on (100)-oriented hydrogen terminated silicon wafers at temperatures from 175°C to 480°C, using a Ta filament 5 cm from the substrate to decompose pure SiH4 gas. The progression of epitaxy was monitored using real-time spectroscopic ellipsometry (RTSE). Analysis using RTSE, transmission electron microscopy (TEM), and scanning electron microscopy shows that at a characteristic thickness, hepi all of the films break down into a-Si:H cones. Below 380°C, both hepi and the thickness of the transition to pure a-Si:H increase with increasing temperature. Above 380°C, hepi was not observed to increase further but TEM images show fewer defects in the epitaxial regions. Secondary ion-mass spectrometry shows that the oxygen concentration remains nearly constant during growth (
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