Simulation of Spin-MOSFET Predicts Strong Dependence of Spin Transport on Magnetic Configuration
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Evaluating the intensity for the different modes gave a minimum of zero emission at θ = 0 for the TE 01 and TM 01 modes, and maxima in the range of 30–50°. On the other hand, the HE 11 mode had a maximum emission at θ = 0. The radius of the nanowire directly affected the intensity of the response of each mode, but much more for the TM01 and HE11 modes than for the TE01 mode. Experimentally, polarization measurements will determine the mode type and should be taken close to the top end of the nanowire to avoid interference with the radiation from the bottom end. The researchers said that the ability to control the properties of laser emission from nanowires may open new possibilities in optoelectronics in conjunction with self-waveguiding and the possibility of nanowire array fabrication. SIARI SOSA
Simulation of Spin-MOSFET Predicts Strong Dependence of Spin Transport on Magnetic Configuration Spin transistors utilizing two ferromagnetic layers as spin injector and spin analyzer, respectively, possess unique output characteristics that are controlled by the relative magnetization configuration of the ferromagnets as well as bias conditions. Together with the ability to utilize the latter as nonvolatile binary data, spin transistors could allow the fabrication of ultrahigh-density nonvolatile memory in integrated circuits (ICs) in which the memory cell consists of a single spin transistor as well as functional spin-transistorgate-based nonvolatile reconfigurable logic. In order to attain high-performance “spintronic” integrated circuits, five requirements need to be fulfilled: (1) a large magnetocurrent ratio for nonvolatile memory and logic functions; (2) high transconductance for high-speed operation; (3) a high amplification capability (voltage, current, and/or power gains) to restore propagating signals between transistors; (4) a small power-delay product and small off current for low power dissipation; and (5) a simple device structure for a high degree of integration and high process yield. Until now, proposed spin transistor designs have been unable to satisfy all of these requirements. The simultaneous achievement of high transconductance and amplification capability with a large magnetocurrent ratio has been difficult. S. Sugahara and M. Tanaka of the Department of Electrical Engineering at the University of Tokyo, however, have conducted a two-dimensional numerical 302
analysis of their spin-type metal oxide semiconductor field-effect transistor (MOSFET) design, fulfilling all five of these requirements and predicting highamplification capability, a low powerdelay product, a low off current, and extremely large magnetocurrent ratios. As reported in the March 22 issue of Applied Physics Letters, the designed spin MOSFET consists of a MOS gate structure and half-metallic ferromagnet (HMF) contacts for the source and drain, similar to a Schottky source/drain MOSFET except for the HMF source/drain contacts, which are HMF/Si junctions without p–n junctions. The device simulated used a channel length of 30 nm,
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