Simultaneous Planarized Selective-Area Epitaxy of Ga x In 1-x As in Normal and Dove-tail Etched Grooves
- PDF / 1,305,927 Bytes
- 6 Pages / 414.72 x 648 pts Page_size
- 1 Downloads / 145 Views
complications to some degree over some length scale. Chloride-transport vapor phase epitaxy (Cl-transport VPE) is no exception. In this investigation, however, we demonstrate that Cl-transport VPE can simultaneouslyprovide planarized selectivearea epitaxy of GaxInl-xAs (hereafter called GaInAs) in [110] and [110] grooves etched in (001) InP. Growth technique The growth system used for this study is a modification of the vapor levitation epitaxy (VLE) technique described elsewhere [5]. With VLE, a full two-inch round wafer is required to maintain levitation of the sample above a porous frit during growth. Often, however, as in this experimental study of selective-area epitaxy, it is more economical and convenient to use smaller samples for growth. This modified VLE reactor, like one reported by Allerman and co-workers [6], uses flows directed downward through porous frits onto the top surfaces of the wafers. The platform has bearings, front and back, that allow it to roll along the inside of a rectangular quartz tube as shown in Fig. 1. The frits are coplanar with the flat inside top surface of the rectangular tube, allowing the wafers to be maintained in close (
Data Loading...
