Strain-induced energetic and electronic properties of stanene nanomeshes
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Strain‑induced energetic and electronic properties of stanene nanomeshes Liyuan Wu1 · Pengfei Zhu2 · Qian Wang1 · Xianchun Chen3 · Pengfei Lu1
© Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract The energetic and electronic properties of stanene nanomeshes (SnNMs) under biaxial strain are investigated by using firstprinciples density functional theory. The results of this exploratory study indicate that SnNMs are stable and that, when the width W of the wall between neighboring holes is even, a bandgap can be opened, indicating that SnNMs can be used in logic applications. The value of the bandgap decreases with increasing W and shows a simple relation with the ratio of the removed to total Sn atoms of stanene. It is found that the application of biaxial strain can effectively lower the energy of formation and tune the bandgap of SnNMs. Both compressive and tensile strain can lower the energy of formation, while only compressive strain can increase the bandgap, which is more favorable for use in logic applications. These results reveal that SnNMs have significant potential for use in electronic applications, especially when applying strain engineering. Keywords Strain engineering · Stanene · Nanomesh · Electronic properties
1 Introduction Two-dimensional (2D) materials have emerged as potential materials for use in nanoelectronic devices owing to their exotic electronic properties and the possibility of downscaling the channel thickness to the atomic level, which can suppress so-called short-channel effects [1–6]. Recently, stanene, a single-layer structure composed of Sn atoms in a manner similar to graphene, has attracted particular interest due to its exceptional electronic properties, such as the largegap 2D quantum spin Hall state [7], enhanced thermoelectricity [8], topological superconductivity [9], and near-roomtemperature quantum anomalous Hall effect [10]. Zhu et al. [11] reported the successful fabrication of 2D stanene on a * Xianchun Chen [email protected] * Pengfei Lu [email protected] 1
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
2
School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China
3
College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
Bi2Te3 substrate by using molecular beam epitaxy (MBE), where compressive strain is induced in the stanene layer by the substrate, causing the stanene to retain its metallic properties. This further promoted related studies on the effects of strain on the mechanical, electronic, and optical properties of stanene [12–16]. Very recently, the superconductive and topological features of stanene were demonstrated experimentally on PbTe(111)/Bi2Te3 and Cu(111) substrates, respectively [17, 18]. A nanomesh is a structure including a high-density array of nanoscale porous holes. Taking graphene as an example, graphene nanomeshes
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