Strain Relaxation at Low Misfits: Dislocation Injection vs. Surface Roughening
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STRAIN RELAXATION AT LOW MISFITS: DISLOCATION INJECTION vs. SURFACE ROUGHENING D.D. PEROVICt, B. BAHIERATHANt, D.C. HOUGHTON*, H. LAFONTAINE*, J.-M. BARIBEAU* tDepartment of Metallurgy and Materials Science, University of Toronto, Toronto M5S 1A4 Canada; Email: [email protected] *Institute for Microstructural Sciences, National Research Council, Ottawa KIA 0R6 Canada. ABSTRACT Two competing strain relaxation mechanisms, namely misfit dislocation generation and surface roughening, have been extensively studied using the GexSil_•JSi (x< 0.5) system as an example. A predictive model has been developed which accurately describes the nature of misfit dislocation nucleation and growth under non-equilibrium conditions. Using optical and electron microscopy, coupled with a refined theoretical description of dislocation nucleation, it is shown that strain relieving dislocations are readily generated at low misfits with a characteristic activation energy barrier regardless of the growth technique employed (i.e. MBE, RTCVD and UHVCVD). Secondly we have studied the alternative elastic strain relaxation mechanism involving surface undulation; x-ray diffraction, electron and atomic force microscopy have been used to characterize GexSil_•/Si (x
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