Strong Light-Matter Coupling in GaN-Based Microcavities Grown on Silicon Substrates
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1068-C05-06
Strong Light-Matter Coupling in GaN-Based Microcavities Grown on Silicon Substrates Fabrice Semond1, Ian Roberts Sellers1, Nadège Ollier2, Franck Natali1, Declan Byrne1, François Réveret2, Flavian Stokker-Cheregi3, Katarzyna Bejtka1,4, Maximo Gurioli3, Anna Vinattieri3, Aimé Vasson2, Pierre Disseix2, Joël Leymarie2, Mathieu Leroux1, and Jean Massies1 1 CRHEA, CNRS, rue Bernard Gregory, Valbonne, 06560, France 2 UMR 6602 UBP/CNRS, LASMEA, 24 Avenue des Landais, Aubière, 63177, France 3 Dipartimento di Fisica and LENS, University of Florence, Sesto Fiorentino, Italy 4 Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG, United Kingdom ABSTRACT We present an overview of our work concerning the fabrication of GaN-based microcavities grown on silicon substrates dedicated to the observation of the strong light-matter coupling regime. In the view of recent promising results in the field, prospects regarding the improvement of heterostructures in order to observe room temperature polariton lasing from a GaN-based microcavity grown on a silicon substrate will be discussed. INTRODUCTION Although GaN-based optoelectronic devices are mostly grown on Al2O3 or SiC, a lot of efforts are made to develop GaN-based devices on silicon substrates. The material quality of GaN layers grown on silicon is nearly as good as the one used to fabricate commercially available GaN-based LEDs, but the light output power of LEDs grown on Si is still too low to compete with devices grown on Al2O3 or SiC. Knowing that, is it reasonable to think about lowthreshold lasing from GaN-based heterostructures grown on Si? In this paper we are going to discuss how cavity-polaritons (CPs) could help to fabricate such a low-threshold laser on silicon. The physics of semiconductor microcavities (MCs) operating in the strong light-matter coupling regime (SCR) has progressed rapidly in the last decade [1,2]. This regime produces new mixed quasiparticles, which are half-light and half-matter, called cavity-polaritons and having unusual and very interesting properties [1,2]. In particular, besides fundamental studies, semiconductor MCs operating in the SCR are promising candidates to develop low threshold light emitters [1,2]. GaN is a good candidate, since the large exciton binding energy and optical oscillator strengths of this materials offers the possibility to observe SCR at room temperature (RT) [3]. Since the first observation of the SCR in a GaN-based MC [4], improvements have been made and polariton emission at RT has been confirmed [5-10] and very recently, RT polariton lasing with an amazingly low-threshold has been reported [11]. FIRST OBSERVATION OF THE STRONG COUPLING IN A GaN MICROCAVITY The first objective to achieve was to obtain the SCR in a GaN-based MC at low temperature (LT) and then at RT. Usually high finesse MCs are needed to demonstrate the SCR. For GaN-based structures it was not, and it is still not, a trivial issue to grow crack-free, highlyreflective Distributed Bragg Reflectors (DBRs). In this respect i
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