Strong visible light emission from silicon-oxycarbide nanowire arrays prepared by electron beam lithography and reactive
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Lloyd Smith IBM Microelectronics, Semiconductor Research and Development Center, Hopewell Junction, New York 12533, USA
Alain E. Kaloyeros and Spyros Gallisa) Colleges of Nanoscale Sciences and Engineering, State University of New York Polytechnic Institute, Albany, New York 12203, USA (Received 11 June 2015; accepted 19 October 2015)
The present report presents results from the fabrication, structural, and optical characteristics of sub-100 nm thermal chemical vapor deposition-grown silicon-oxycarbide (SiCxOy) nanowire (NW) arrays fabricated by e-beam lithography and reactive-ion-etching. The composition of SiCxOy materials follows closely the silicon-oxycarbide stoichiometry [SiCxO2(1x), (0 , x , 1)] as observed by compositional and structural analysis. The corresponding structural and bonding evolution of SiCxOy are well-correlated with changes in their optical properties, as demonstrated by the linear dependence of their optical gap and refractive index with [Si–C]/[Si–O] bond–area ratio. By virtue of these advantages, properly tailored SiCxOy NWs were fabricated, exhibiting strong room-temperature visible photoluminescence (PL) through engineering of [Si–C]/[Si–O] bonds. The current studies focused on the thermal-oxidation and excitation intensity behavior of SiCxOy NWs revealed their very good stability, as their luminescence characteristics remain unchanged upon annealing in oxygen ambient (250 °C), while the PL intensity dependence on the excitation power-density exhibited a linear increase up to ;800 W/cm2. I. INTRODUCTION
Contributing Editor: Joan M. Redwing a) Address all correspondence to this author. e-mail: [email protected] This paper has been selected as an Invited Feature Paper. DOI: 10.1557/jmr.2015.346
methods could potentially reduce manufacturing costs and process complexity owing to the seamless integration of Sibased materials with processes developed in semiconductor CMOS technology areas and by using the existing silicon microelectronics infrastructure. The premise behind the high interest in scale down is the possible confinement in one (1D) or two (2D) dimensions, leading to new compelling properties [e.g., the increase of extraction efficiency of spontaneous emission and suppression of Auger recombination (AR)].14,15 Therefore, the functionality of such nanostructured materials and their devices can be used in a ubiquitous way on light emission applications.16 At the same time, emphasis needs to be placed on identifying and eliminating potential obstacles that may limit the luminescence efficiency of such nanostructured materials, and in particular, their dependence on temperature and power density. The light emission efficiency of luminescent materials can be influenced by fluctuations in temperature/power-density.17,18 This can become critical, as for example, in warm white light emitting diode (LED) applications with devices operating at high temperature (;150 °C) and power density (;200 W/cm2). In these instances, the dependence of the luminescent material emission on temperature an
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