Structural and dielectric proper ties of CaCu 3 Ti 4 O 12 thin film. deposited using laser ablation.
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Structural and dielectric properties of CaCu3Ti4O12 thin film. deposited using laser ablation. V. Gupta, R.R. Das, A. Dixit, P. Bhattacharya and R.S. Katiyar Department of Physics, University of Puerto Rico, San Juan, PR 00931
ABSTRACT CaCu3Ti4O12 (CCT) thin films were deposited on Pt/TiO2/SiO2/Si substrates using pulsed laser deposition technique. During the thin films deposition, the substrate temperature was varied in the range of 700-800 ºC with a constant O2 pressure of 200 mTorr. X-ray diffraction showed the polycrystalline nature of the films. The dielectric properties of the films were studied in metal insulator configuration. Films grown at higher substrate temperature exhibited highest value of dielectric permittivity (~2200). Micro Raman spectroscopy was used to study the vibrational modes of the CCT thin films in comparison with the bulk ceramics. Introduction: CaCu3Ti4O12 (CCTO) perovskite-like compound belongs to a family of type ACu3Ti4O12 and was studied nearly thirty years ago [1]. Recently, it has been found that the dielectric constant of CaCu3Ti4O12 (CCT) single crystal and ceramic is ~105 order of magnitude at radio frequency regime (kHz) over a broad temperature range of 100-600 K and drops down to the static value of ~100 at lower temperature (
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