Structural and electrical properties of Al/BiFeO 3 /ZrO 2 /n-Si structure for non-volatile memory application
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Structural and electrical properties of Al/BiFeO3/ZrO2/n‑Si structure for non‑volatile memory application Amit Singh1 · Chandravilash Rai1 · Sanjai Singh1 Received: 25 June 2020 / Accepted: 5 September 2020 / Published online: 19 September 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract In this communication, the structural and electrical properties of metal–ferroelectric–insulator–silicon (MFIS) capacitor structure have been reported for non-volatile memory applications. Sol–gel with spin coating and rf sputtering process have been used for depositing B iFeO3 (BFO) and Z rO2 films, respectively. It has been observed that BFO film shows pure ferroelectric phase, uniform grain size and maximum refractive index at annealing temperature of 500 °C. Thermo-gravimetric analyzer and differential scanning calorimetry analysis indicate good agreement with X-ray diffraction of BFO film. In Z rO2 thin film, it has been observed that Z rO2 is in amorphous state at all annealing temperatures and the maximum refractive index has been found at annealing temperature of 400 °C. Al/ZrO2/n-Si (MIS), Al/BiFeO3/n-Si (MFS) and Al/BiFeO3/ZrO2/n-Si (MFIS) structures have been fabricated to investigate the electrical characteristics. The memory window has been observed by capacitance–voltage (C–V) characteristics and it improves from 1.9 V in MFS structure to 5.4 V in MFIS structure with 8 nm dielectric layer. Leakage current density has been observed by current density–gate voltage (J–V) characteristics and it is order of 1 0−5 A/cm2 in M F150 nmI8 nmS structure. No charge value degrades up to 1 012 iteration cycles in M F150 nmI8 nmS structure. Keywords Memory window · Leakage current density · Endurance · MFIS · Ferroelectric
1 Introduction Memory plays a vital role in the semiconductor industry. It is an important block in modern integrated circuits (ICs), for processing and saving data. Data are saved either permanent or temporal [1]. Permanent storage retains its data when the device is unpowered while temporal storage losses its contents when the device is unpowered. There are two types of memories one is a non-volatile memory which is a permanent storage type and another is a volatile memory which is a non-permanent type [2]. Few examples of nonvolatile memories are flash memory, ferroelectric random * Amit Singh [email protected] Chandravilash Rai [email protected] Sanjai Singh [email protected] 1
Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Allahabad, Uttar Pradesh, India
access memory (FRAM), spin based magnetic random access memory (MRAM), etc. Among non-volatile memories, flash memory has emerged as one of the promising candidate since its introduction in market by Toshiba in year 1984 and covers the largest non-volatile market after that. But due to geometric limitations in flash memory, the scaling below 45 nm is a challenge in flash gate based memory [3]. As flash memory has been reached to its scaling limits, severa
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