Structural and photoconducting properties of MBE and MOCVD grown III-nitride double-heterostructures
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hotoconducting properties of MBE and MOCVD grown III nitride doubleheterostructures Sindy HauguthFrank, Vadim Lebedev, Katja Tonisch, Henry Romanus, Thomas Kups, HansJoachim Büchner, Gerd Jäger, Oliver Ambacher and Andreas Schober MRS Proceedings / Volume 1076 / 2008 DOI: 10.1557/PROC1076K0307
Link to this article: http://journals.cambridge.org/abstract_S194642740003116X How to cite this article: Sindy HauguthFrank, Vadim Lebedev, Katja Tonisch, Henry Romanus, Thomas Kups, HansJoachim Büchner, Gerd Jäger, Oliver Ambacher and Andreas Schober (2008). Structural and photoconducting properties of MBE and MOCVD grown IIInitride doubleheterostructures. MRS Proceedings,1076, 1076K0307 doi:10.1557/PROC1076K0307 Request Permissions : Click here
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Mater. Res. Soc. Symp. Proc. Vol. 1076 © 2008 Materials Research Society
1076-K03-07
Structural and photoconducting properties of MBE and MOCVD grown III-nitride double-heterostructures Sindy Hauguth-Frank1, Vadim Lebedev2, Katja Tonisch1, Henry Romanus1, Thomas Kups1, Hans-Joachim Büchner3, Gerd Jäger3, Oliver Ambacher2, and Andreas Schober1 1 Institute of Micro- and Nanotechnologies, Ilmenau Technical University, Gustav- Kirchhoff-Str. 7, Ilmenau, 98693, Germany 2 Fraunhofer Institute for Applied Solide State Physics, Tullastr. 72, Freiburg, 79108, Germany 3 Institute of Measurement and Sensor Technology, Ilmenau Technical University, GustavKirchhoff-Str. 7, Ilmenau, 98693, Germany ABSTRACT Investigations on standing wave (SW) interferometry come in focus of interest in the course of ongoing miniaturization of high precision length measurement systems. A key problem within these efforts is the development of a transparent ultra-thin photodetector for sampling the intensity profile of the generated SW. Group III-materials are promising candidates to ensure a good photodetector performance combined with the required optical transparency. In this work, we report on the interrelation of strain and dislocation density along with the influence of the structural properties on the sensitivity of double-heterostructure III-nitride photodetectors grown by molecular beam and metal organic vapour phase epitaxy.
INTRODUCTION Optical interferometry has become the most used method for nanoscale high precision displacement measurements, especially, in areas where a non-contact measurement setup is required. State of the art interferometers are based on the Michelson interferometer concept. These interferometers consist of a plurality of classical optical components (e.g. beam splitters), which require a relatively large workspace along with high precision alignment. The most promising alternative is the standing wave interferometer (SWI), which combines the advantages of classical interferometers with the moderate space requirements due to a reduced number of the optical components [1]. In the fundamental setup of SWI most of the incident beam is transmitted through the photodetecto
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