Structural, optical and photoluminescence investigations of nanocrystalline CuO thin films at different microwave powers
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Structural, optical and photoluminescence investigations of nanocrystalline CuO thin films at different microwave powers Akhalakur Rahman Ansari1,2 · Ahmed H. Hammad1,3 · Mohamed Sh. Abdel‑wahab1,4 · Mohammad Shariq5 · Mohd. Imran6 Received: 15 April 2020 / Accepted: 2 September 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Thin films of copper oxide were prepared through two steps: the formation of metallic copper thin films by DC sputtering technique and oxidizing the metallic copper films through microwave plasma chemical vapor deposition technique. X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM) were used to detect the crystalline phases and the films morphology, respectively. Tenorite CuO phase with interlocking between grains were observed and detected. Optical and photoluminescence properties were investigated by UV–Vis-NIR to detect the optical transparency, optical band gap, and refractive index of the prepared films. The optical transmittance of the studied films was resolved by Swanepoel’s procedure due to the presence of the optical interference in such samples. The optical band gap values were observed to decrease from 2.355 to 1.986 eV as the microwave power increase. A strong UV emission at around 358 nm was observed in all CuO samples. Moreover, weak blue and green emission were also observed in the photoluminescence spectra. Keywords CuO · Oxidation · Structure · Morphology · Optical properties · Photoluminescence
* Ahmed H. Hammad [email protected]; [email protected]; [email protected] 1
Center of Nanotechnology, King Abdulaziz University, Jeddah 21589, Saudi Arabia
2
Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur, Malaysia
3
Electron Microscope and Thin Films Department, Physics Division, National Research Centre, Dokki, Giza 12622, Egypt
4
Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni-Suef University, Beni‑Suef 62521, Egypt
5
Department of Physics, Faculty of Science, Jazan University, Jazan 45142, Saudi Arabia
6
Department of Chemical Engineering, Faculty of Engineering, Jazan University, Jazan 45142, Saudi Arabia
13
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A. R. Ansari et al.
1 Introduction Low cost metallic copper material can be applicable for conductive layers in electronic devices and reduces the resistance–capacitance (RC) time delay in the integrated circuits (Anžlovar et al. 2007; Yeganeh and Torabi 2011). Furthermore, copper oxide can be applied as a transparent conducting oxide (TCO) with p-type semiconductor for broad applications in optoelectronic devices (Anžlovar et al. 2007; Figueiredo et al. 2008). The oxides of copper are almost presented as cuprous oxide (Cuprite, Cu2O) and cupric oxide (Tenorite, CuO) (Alkoy and Kelly 2005). Both of them are quite different in the crystal structure and band gap value. CuO has a monoclinic crystalline phase with an optical band gap value varied
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