Structure and dielectric properties of barium strontium titanate ferroelectric thin film prepared by DC micro-arc oxidat
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Structure and dielectric properties of barium strontium titanate ferroelectric thin film prepared by DC micro‑arc oxidation Min Wang1,2 · Wenfang Li3 · Xi Zuo1 · Wen Zhu3 · Guoge Zhang2 Received: 30 March 2020 / Accepted: 21 August 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Barium–strontium titanate (BST) ferroelectric thin film was fabricated on Ti substrates by micro-arc oxidation (MAO) in an aqueous solution consisting of 0.6 mol/L Ba(OH)2·8H2O and 0.4 mol/L Sr(OH)2·8H2O. The phase composition, elements distribution, dielectric and ferroelectric properties of the BST thin film were characterized. The results show that the BST film is mainly composed of BaxSr(1−x)TiO3 phase. The Ba, Sr, Ti and O elements are generally uniformly distributed across the film, and the local fluctuation of elements distribution may be caused by MAO holes in the membrane. The BST film is mainly deposited through an electrophoretic process. The dielectric constant of the BST thin film is about 283 measured at 1 kHz, and the film has ferroelectric property at room temperature because of the misfit strain in the film. Keywords BaxSr(1−x)TiO3 · Micro-arc oxidation · Micro-structure · Dielectric property · Ferroelectric property
1 Introduction BaxSr(1−x)TiO3(BST) is a solid solution of B aTiO3 (BT) and SrTiO3 (ST), which has found many applications in different fields, such as ultra-large-scale dynamic random access memory [1–3], non-volatile ferroelectric memory [4, 5], tunable microwave devices [6, 7], pyroelectric detector [8], tunable bulk acoustic resonator [9, 10], and optical waveguide devices [11, 12], due to the benefits of high dielectric constant, low dielectric loss, tunable Curie temperature and stable structure. BST has become one of the global hot spots in the research of new functional materials [2, 13]. Magnetron sputtering [14, 15], sol–gel [16, 17], pulsed laser deposition [18, 19] and metal–organic chemical vapor deposition [20, 21] are the most commonly used methods to prepare BST films. Although each method has its own advantages, there are the limitations which restrict the large-scale commercial application of BST ferroelectric thin films. For instance, * Min Wang [email protected] 1
College of Mechanical Engineering, Guangdong Polytechnic Normal University, Guangzhou 510635, China
2
School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China
3
School of Materials Science and Engineering, DongGuan University of Technology, Dongguan 523808, China
both magnetron sputtering and PLD can produce film with controllable components, but the film growth rate is low and the cost of fabrication is high. Thus, it is difficult to obtain large membranes with good dielectric performance. The sol–gel process is deemed as a simple and cost-effective method for the preparation of large-sized ferroelectric membranes. However, micro-cracks might be produced during the subsequent heat-treatment process, leading to inferior ferroelectri
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