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Amorphous CNx thin films have been deposited by PLD under nitrogen radical beam irradiation. Structural and electrical properties were investigated . The maximum N/C ratio 0.23 was obtained for the film deposited under nitrogen radical beam irradiation at 1.3 Pa and rf input power 400 W. Raman spectra of the deposited films indicated that the bonding configurations of carbon atoms in the films were independent on N/C atomic ratio of films and dominant hybridization state of carbon atom is sp2. Bonding configurations of N were depended on N/C atomic ratio. N bonded to pyridine-like N and/or sp3C slightly increased with N/C atomic ratio, on the other hand, substitutional nitrogen in graphite decreased with increasing N/C atomic ratio. Electrical conductivity decreased with increasing N/C atomic ratio and temperature dependent electrical conductivity showed electronic conduction occurred by variable-range hopping between p electron localized states. The decreasing in electrical conductivity of with increasing N/C atomic ratio is due to the increasing N bonded to pyridine-like N and/or sp3C in the films with increasing N/C. REFERENCES 1.

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