Structure-Simplified Resonant-Tunneling-Diode Terahertz Oscillator Without Metal-Insulator-Metal Capacitors
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Structure-Simplified Resonant-Tunneling-Diode Terahertz Oscillator Without Metal-Insulator-Metal Capacitors Ta Van Mai 1
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& Yusei Suzuki & Xiongbin Yu & Safumi Suzuki & Masahiro Asada
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Received: 15 July 2020 / Accepted: 19 August 2020/ # Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract
We propose and fabricate a novel structure-simplified resonant tunneling diode (RTD) terahertz (THz) oscillator without metal-insulator-metal (MIM) capacitors. In conventional RTD THz oscillators, the DC and RF circuits are separated by MIM capacitors. In the proposed oscillator, the DC-to-RF separation is based on the difference between the impedances of the antenna and biasing wire inductances in the low-frequency range and those in the THz range. Thus, by removing MIM capacitors, we simplify the device structure. We also introduce an InP etch stopper layer in the RTD epitaxial structure for easy formation of an airbridge. Owing to the simple structure and the introduction of the etch stopper layer, the fabrication process is significantly simplified. We successfully fabricated novel RTD oscillators using a simple fabrication process. Oscillation frequency of up to 742 GHz and output power of ~ 10 μW up to 600 GHz were obtained, respectively. The novel RTD oscillator is expected to be suitable for massive array configurations that could enable a wide range of practical THz applications. Keywords Resonant tunneling diodes . Terahertz oscillator . Slot antenna
1 Introduction Nowadays, terahertz (THz) waves with oscillation frequencies ranging from 100 GHz to 10 THz are extensively studied. THz waves offer extremely large available bandwidth, penetrate various nonconducting materials, and exhibit spectral fingerprinting features for biomedical analyses. Owing to these features, several prospective applications of THz waves, * Safumi Suzuki [email protected]
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Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S3-9 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
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Institute of Innovative Research, Tokyo Institute of Technology, 2-12-1-S3-9 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
Journal of Infrared, Millimeter, and Terahertz Waves
such as high data rate wireless communications, high-resolution imaging, and spectroscopy, have been proposed [1–5]. Thus far, the main obstacle hindering the commercialization of THz applications has been the lack of compact and high output power THz sources that can operate at room temperature. Realizing such THz sources would promote the commercialization of THz applications. Many candidates for THz sources have been proposed. Since the frequency of THz waves is between those of millimeter waves and infrared, THz sources can be realized using both optical and electronic devices. Optical devices include quantum cascade lasers [5–8]; however, achieving a high-performance operation at room temperature remains challenging. Electronic devices include new-generation transistors such as HEMT [9], HBT [10, 11], Si-CMOS [1
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