Studies of the Dirac Point in a GO/P3HT Nanocomposite Thin-Film Phototransistor
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https://doi.org/10.1007/s11664-020-08394-2 Ó 2020 The Minerals, Metals & Materials Society
Studies of the Dirac Point in a GO/P3HT Nanocomposite Thin-Film Phototransistor Y. YOUSFI,1 A. JOUILI,1 S. MANSOURI,1,2,5 L. EL MIR,1 AHMED AL-GHAMDI,3 and F. YAKUPHANOGLU4 1.—Laboratory of Physics of Materials and Nanomaterials Applied at Environment: LaPhyMNE, Faculty of Sciences in Gabes, Gabes University, 6072 Erriadh Zrig City, Gabes, Tunisia. 2.—Faculty of Sciences and Technology in Sidi Bouzid, 9100 Sidi Bouzid, Tunisia. 3.—Department of Physics, Faculty of Sciences, King Abdulaziz University, Jeddah, Saudi Arabia. 4.—Department of Physics, Faculty of Science, Fırat University, Elazig, Turkey. 5.—e-mail: [email protected]
Developing a numerical model for thin-film transistors has become significant for optoelectronic applications. In this study, we describe the shift of the Dirac point in a graphene oxide thin-film phototransistor doped with various ratios of poly (3-hexylthiophene) (P3HT) (0.01 and 0.05). According the electrical characteristics of graphene oxide/poly (3-hexylthiophene) thin-film transistors and based on the proposed model, we simulate the carrier concentration, the Fermi level (Ef), the mobility (l), and the conductivity (r) of charge carriers, the square resistance, and the Seebeck coefficient as a function of the applied gate voltage in the dark and under the illumination of 100 mW/cm2, using Matlab/Simulink. The results show that, when applying a negative gate voltage, the Fermi level of graphene will shift below the Dirac point, due to the electrical field effect induced by the P3HT molar ratios and the illumination effect. This shift is exhibited more obviously in the mainly simulated parameters, and can be explained by the molar ratios of P3HT, which modulate the displacement field to allow the opening of a transport band gap through a Colombian force created by the oxygen groups. This work can provide a theoretical basis for analyzing the characteristics of these components for application in the logic circuit domain. Key words: GO/P3HT-TFT, Dirac point shift, conductivity, Fermi level, Seebeck coefficient
INTRODUCTION Graphene has been identified as a promising electronic material for recently emerging applications, and there have been several studies of its material properties and related device performance.1–3 In fact, graphene is a new two-dimensional material with sp2 hybridization of its component carbon atoms. Despite the enormous electrical properties of graphene that can be used in flexible devices and transparent electrodes,
(Received March 28, 2020; accepted August 1, 2020)
graphene sheet applications are practically limited.4,5 Indeed, these limitations can be treated by graphene oxide (GO). The functional oxygen groups allow GO to be dispersed in water, thus manufacturing large area devices at a low price, as well as hydrogel and polymer compounds, and metal oxides. To recreate the sp2 hybridization of the component carbon atoms of graphene, manufacturing GO is subject t
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