Study of Band Alignment at CBD-CdS/Cu(In 1-x Ga x )Se 2 ( x = 0.2 - 1.0) Interfaces by Photoemission and Inverse Photoem
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1012-Y03-19
Study of Band Alignment at CBD-CdS/Cu(In1-xGax)Se2 (x = 0.2 - 1.0) Interfaces by Photoemission and Inverse Photoemission Spectroscopy Shimpei Teshima1, Hirotake Kashiwabara1, Keimei Masamoto1, Kazuya Kikunaga1, Kazunori Takeshita1, Tetsuji Okuda1, Keiichiro Sakurai2, Shogo Ishizuka2, Akimasa Yamada2, Koji Matsubara2, Shigeru Niki2, Yukio Yoshimura3, and Norio Terada1,2 1 Nano-structure and Advanced Materials, Kagoshima University, 1-21-40, Korimoto, Kagoshima, 890-0065, Japan 2 Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1, Umezono, Tsukuba, 305-8568, Japan 3 Kagoshima Prefectural Institute of Industrial Technology, 1445-1, Oda, Hayato, Kirishima, 8995105, Japan
ABSTRACT Dependence of band alignments at interfaces between CdS (grown by chemical bath deposition) and Cu(In1-xGax)Se2 (CIGS) (by conventional 3-stage co-evaporation) with 0.2
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