Study of LiInSe 2 Single Crystals for the Thermal Neutron Detection
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tudy of LiInSe2 Single Crystals for the Thermal Neutron Detection A. V. Belushkina, d, *, A. A. Bogdzela, A. A. Goloshumovab, c, L. I. Isaenkob, c, S. I. Lobanovb, c, V. M. Milkova, A. Yu. Tarasovab, c, and A. P. Yelisseyevb, c aFrank
Laboratory of Neutron Physics, Joint Institute for Nuclear Research, Dubna, Moscow oblast, 141980 Russia bNovosibirsk State University, Novosibirsk, 630090 Russia c Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia dInstitute of Physics, Kazan Federal University, Kazan, 420008 Tatarstan, Russia *e-mail: [email protected] Received June 27, 2019; revised July 30, 2019; accepted August 10, 2019
Abstract—Lithium–indium diselenide (LiInSe2) is a new semiconductor material, sensitive to the thermal neutrons. LiInSe2 compound was synthesized from Li (99.99%), In (99.999%) and Se (99.999%). The growth of LiInSe2 single crystals was performed using the vertical option of Bridgman–Stockbarger method. The crystals were characterized using the electrical conductivity and optical spectroscopy methods. Stoichiometric composition of the LiInSe2 was confirmed by the high precision chemical analysis, as well as by X-ray diffraction. Compact 252Cf neutron source with the activity 6.3 × 105 n/s allowed measuring amplitude characteristics and defining the optimal operating voltage for neutron detection. Time-of-flight neutron spectra were measured at the fast pulsed research reactor IBR-2 at the Joint Institute for Nuclear Research. Keywords: semiconductor, crystal growth, crystal structure, neutron detection DOI: 10.1134/S102745102007006X
INTRODUCTION Semiconductor-based neutron detectors have been highly investigated to overcome the shortcomings of the other type state-of-the-art neutron detectors and to address the requirements for ultra-high spatial resolution in neutron imaging. As demonstrated for ionising particle, semiconductor detectors can operate at a much lower bias voltage with fast time response and can couple directly to the associated readout electronics that can provide a real time online readout system. A typical semiconductor neutron detector consists of a thin film of neutron reactive material deposited on a semiconductor diode. 10B and 6LiF are commonly used as conversion layer materials owing to their stability, large thermal neutron cross-sections and primary reaction products. The deficiency of this approach is a rather low efficiency of neutron detection. An alternative, highly attractive approach to high spatial resolution neutron detection with high efficiency is the use of a homogenous semiconductor material that intrinsically contains a neutron sensitive element as part of its bulk. Such a material allows a neutron conversion and detection of the conversion products to take place throughout the entire semiconductor bulk, leading to very high detection efficiencies. In recent years, Li-containing single-crystal LiInSe2 has emerged as a promising material for the realization of such semiconductor neutron dete
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