Study of the Interface/Bonding of Boron Nitride (BN) Nanocomposites
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Study of the Interface/Bonding of Boron Nitride (BN) Nanocomposites Angel L. Morales-Cruz1, Janet Hurst2 and Diana Santiago2 1 University of Puerto Rico, PO Box 30770 San Juan,PR 00931, U.S.A. 2 NASA Glenn Research Center, 21000 Brookpark Rd, Cleveland, OH 44135, U.S.A. ABSTRACT Boron nitride nanotubes (BNNTs), an analogue of carbon nanotube (CNT) is one of the most used non-metallic materials in high technology applications related to thin film fabrications. Taking advantage of their unique properties such as electrically non-conductive, thermally conductive, and high hardness, it has been used in high-temperature electronic devices, multifunctional aerospace materials, and structures and electric and aerospace systems. The main goal of this project was to use BNNTs in the fabrication of nano epoxycomposites to enhance their thermal and mechanical properties to use it for applications in aerospace constituents. In order to accomplish this goal, BNNTs were functionalized with isopherone diisocyante (IPDC). Surface analysis techniques were employed to ensure the modification BNNTs and study the interface of the reinforced composites before and after the modification. Mechanical and thermal conductivity testing was performed in order to understand the quality of the composites. Three different nanocomposites were accomplished with hBN and BNNTs using two different epoxy polymers and three curing agents. The systems EPON 862/Curing Agent W/ (hBN or BNNTs) have Tgs and tan deltas higher compared with those fabricated at the same conditions without nanoparticles. The fabricated BN composites showed improved physical properties due to their particle dispersion and boron nitrite intermolecular interactions with the epoxy polymer. INTRODUCTION Advanced technology materials have been applied for thin film fabrication, specially the carbides, nitrides of boron and silicon, a great group of hard non-metallic materials that include boron nitride (BN), silicon carbide (SiC), silicon nitride (Si3N4) and diamond [1]. Boron nitride nanotubes (BNNTs) are inorganic structural analogues of carbon nanotubes in nature: alternating B and N atoms entirely substitute for C atoms in a graphitic like sheet with almost no change in atomic spacing [2]. Because of their unique electrical properties as a dielectric insulator (i.e, Eg ~ 5 eV), mechanical properties (i.e., high hardness), high thermal conductivity (~350 W/mK), they have the potential to revolutionize aero-space and industry because they are prospects for several applications. Potential applications of these materials are include: protective coating, coated tools, optical windows, high-temperature electronic devices, multifunctional aerospace materials, and structures and electric and aerospace systems. As some allotropes of boron nitride (i.e., hexagonal and cubic), there are possibilities to p- and n-type doping BNNTs with Be, Si, S, C, Co, W, O, and others and chemical functionalization with organic compounds [3, 4, 5, 6]. Researchers have been recently working using different m
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