Studying the switching variability in redox-based resistive switching devices
- PDF / 1,768,328 Bytes
- 7 Pages / 595.276 x 790.866 pts Page_size
- 92 Downloads / 221 Views
Studying the switching variability in redox‑based resistive switching devices Elhameh Abbaspour1 · Stephan Menzel2 · Christoph Jungemann1
© Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract The variability of switching parameters in redox-based resistive switching RAM (ReRAM) devices is investigated by a 3D kinetic Monte Carlo approach. This physics-based model can simulate the filamentary resistive switching in the electroforming, SET and RESET processes and captures their key features. It allows to predict the impact of the forming and switching conditions on the fluctuations of key parameters like the current and resistance levels of the cell in on and off states. The origin of the variability of the switching parameters was investigated in terms of the involved physical processes. The simulations also confirm the multilevel cell operation capabilities of ReRAM devices. Keywords Redox-based resistive switching RAM (ReRAM ) · Forming · SET · RESET · Fluctuations · Variability
1 Introduction Among the current types of nonvolatile memories (NVM), ReRAM possesses unique features like CMOS compatibility, low-power consumption, promising scalability and a simple structure [1, 2]. These features make ReRAM a potential candidate for main memory applications of future computer systems, which also has the capability of performing logic and arithmetic operations beyond data storage and can accelerate neural network applications [3, 4]. Usually, a one-time process called electroforming is required for a virgin cell to create an oxygen-deficient conductive filament (CF) through the oxide sandwiched between two electrodes. The rupture and reconstruction of this filament later during the RESET and SET processes can modulate the cell resistance and switches the cell on and off. The on and off states are referred to here as low-resistance state (LRS) and high-resistance state (HRS) [5]. The switching between HRS and LRS causes fluctuations, because it is the result of stochastic processes happening during the switching cycles like oxygen vacancy (V∙∙O ) generation, recombination * Elhameh Abbaspour [email protected]‑aachen.de 1
Chair of Electromagnetic Theory, RWTH Aachen University, 52056 Aachen, Germany
Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany
2
and diffusion. This randomness causes a poor switching uniformity, which is one of the main obstacles for ReRAM to be mass produced and has been reported commonly in the literature [6–8]. The origin of these fluctuations is not fully understood yet, and further studies are needed to avoid the undesired fluctuations in future device designs. The switching characteristics of ReRAM can be affected by different parameters related to the forming, SET and RESET processes like the current compliance or the applied SET and RESET voltages. This work studies the effect of some of these parameters on the device behaviour during the SET and RESET processes and the cycle-to-cycle variability of the switching characteristics. We ha
Data Loading...
