Substrate temperature dependence of structure and resistivity of SrRuO 3 thin films grown by pulsed laser deposition on

  • PDF / 1,426,866 Bytes
  • 10 Pages / 612 x 792 pts (letter) Page_size
  • 80 Downloads / 214 Views

DOWNLOAD

REPORT


MATERIALS RESEARCH

Welcome

Comments

Help

Substrate temperature dependence of structure and resistivity of SrRuO3 thin films grown by pulsed laser deposition on (100) SrTiO3 N.D. Zakharov Max-Planck-Institut fu¨r Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany

K.M. Satyalakshmia) Max-Planck-Institut fu¨r Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany, and Department of Physics, Technion—Israel Institute of Technology, Haifa 32000, Israel

G. Koren Department of Physics, Technion—Israel Institute of Technology, Haifa 32000, Israel

D. Hesse Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany (Received 28 September 1998; accepted 27 August 1999)

The resistivity of SrRuO3 thin films on (001) SrTiO3 substrates grown at different temperatures by pulsed laser deposition is correlated to the microstructure. Films grown at 775 °C are of an orthorhombic structure, contain very few defects, and exhibit a low resistivity of 150 ␮⍀ cm. Films grown at other temperatures contain a cubic phase and show higher resistivities. The defects present in the films, particularly twins and antiphase boundaries, are analyzed by high-resolution transmission electron microscopy, and their origin, as well as influence on film resistivity, is discussed. I. INTRODUCTION

SrRuO3 is one of the ternary transition metal oxides showing good electrical conductivity, with a room temperature resistivity in the order of 10−4 ⍀ cm. This conductivity permits the application of SrRuO3 films as oxide electrodes for ferroelectric devices and as normal metal barriers for Josephson junctions involving high-Tc superconducting oxide films. The effect of deposition parameters such as substrate temperature and oxygen pressure on structure and electrical properties of SrRuO3 films grown on different substrates were investigated previously.1–10 Jia et al.5,6 have shown that the conductivity of SrRuO3 films increases with increasing deposition temperature due to the improved crystallinity of the films grown at higher temperatures. Furthermore, a decrease in the electrical conductivity has been observed for SrRuO3 films grown at reduced oxygen pressure.2,9 Epitaxial SrRuO3 films grown on (001) SrTiO3 exhibit a domain structure.4,10 On vicinal SrTiO3 substrates, single domain SrRuO3 film growth has been observed by Gan et al.3 and Jiang et al.11 However, there is a lack of information concerning the correlation between defect structure and electrical properties. In this paper structure and resistivity of thin SrRuO3 films grown on

a)

Present address: School of Applied and Engineering Physics, Cornell University, Ithaca, NY. J. Mater. Res., Vol. 14, No. 11, Nov 1999

http://journals.cambridge.org

Downloaded: 17 Mar 2015

SrTiO3(001) substrates by pulsed laser deposition at different substrate temperatures are investigated. Correlations are found between the electrical conductivity and the microstructure of the films. The defects observed were characterized in detail by high-resolution transmission electron microscopy.