Superior Pseudocapacitive Storage of a Novel Ni 3 Si 2 /NiOOH/Graphene Nanostructure for an All-Solid-State Supercapacit
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ARTICLE
Cite as Nano-Micro Lett. (2021) 13:2 Received: 30 June 2020 Accepted: 28 August 2020 © The Author(s) 2020
https://doi.org/10.1007/s40820-020-00527-w
Superior Pseudocapacitive Storage of a Novel Ni3Si2/NiOOH/Graphene Nanostructure for an All‑Solid‑State Supercapacitor Jing Ning1,2 *, Maoyang Xia1,2, Dong Wang1,2 *, Xin Feng1,2, Hong Zhou1,2, Jincheng Zhang1,2, Yue Hao1,2
HIGHLIGHTS • Three types of N i3Si2 were successfully fabricated by low-pressure all-solid melting-reconstruction chemical vapor deposition, and the growth pattern changed with the carbon source content. • In a carbon-rich atmosphere, high-energy atoms bombard the Ni and Si surface, and reduce the free energy in the solid Ni–Si particles’ thermodynamic equilibrium, considerably catalyzing the growth of Ni–Si nanocrystals. • Ni3Si2/NiOOH/graphene provides a large specific area and NiOOH inhibits insulation on the electrode surface in an alkaline solution and accelerates the electron exchange rate.
ABSTRACT Recent developments in the synthesis of graphene-based structures focus on continuous improvement of porous nanostructures,
doping of thin films, and mechanisms for the construction of threedimensional architectures. Herein, we synthesize creeper-like Ni3Si2/
NiOOH/graphene nanostructures via low-pressure all-solid meltingreconstruction chemical vapor deposition. In a carbon-rich atmosphere, high-energy atoms bombard the Ni and Si surface, and reduce the free energy in the thermodynamic equilibrium of solid Ni–Si particles, considerably catalyzing the growth of Ni–Si nanocrystals. By controlling the carbon source content, a Ni3Si2 single crystal with high crystallinity and
good homogeneity is stably synthesized. Electrochemical measurements indicate that the nanostructures exhibit an ultrahigh specific capacity of 835.3 C g−1 (1193.28 F g−1) at 1 A g−1; when integrated as an all-solid-
state supercapacitor, it provides a remarkable energy density as high as 25.9 Wh kg−1 at 750 W kg−1, which can be attributed to the freestanding Ni3Si2/graphene skeleton providing a large specific area and NiOOH inhibits insulation on the electrode surface in an alkaline
solution, thereby accelerating the electron exchange rate. The growth of the high-performance composite nanostructure is simple and controllable, enabling the large-scale production and application of microenergy storage devices. KEYWORDS Pseudocapacitive storage; Creeper-like Ni3Si2; NiOOH; Graphene; All-solid-state supercapacitors
* Jing Ning, [email protected]; Dong Wang, [email protected] 1 The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi’an 710071, People’s Republic of China 2 Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi’an 710071, People’s Republic of China Vol.:(0123456789)
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1 Introduction Electrical energy storage systems have become one of the key research objects that are studied to address current energy challenges such as the rapid consumption of fossil fuels,
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