Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Mo
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INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties R. R. Reznika,*, V. O. Gridchinb, K. P. Kotlyarb, N. V. Kryzhanovskayab, S. V. Morozovc,d, and G. E. Cirlinb,e,f a St.
Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO), St. Petersburg, 197101 Russia b Alferov Academic University, Russian Academy of Sciences, St. Petersburg, 194021 Russia c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950 Russia d Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950 Russia e Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 190103 Russia f St. Petersburg State Electrotechnical University “LETI”, St. Petersburg, 197376 Russia *e-mail: [email protected] Received April 15, 2020; revised April 21, 2020; accepted April 21, 2020
Abstract—The study concerns the issue of how the morphological characteristics and optical properties of morphologically branched InGaN nanostructures grown on the Si(111) surface by molecular-beam epitaxy depend on the substrate temperature. It is shown that, as the substrate temperature is elevated, the height of InGaN nanocolumns formed at the initial stage of growth increases. In addition, an increase in the growth temperature of InGaN nanostructures yields an increase in the intensity of the photoluminescence spectra of such structures, and the dependences of the integrated photoluminescence intensity on the excitation power density are linear. These facts suggest that the structures offer promise for optical applications, specifically, for the creation of white light-emitting diodes on the basis of a unified material. Keywords: nanostructures, InGaN, silicon, molecular-beam epitaxy, semiconductors, optoelectronics DOI: 10.1134/S1063782620090237
1. INTRODUCTION At present, the InGaN alloy attracts particular interest as a material appropriate for the production of visible light sources [1] and renewable energy sources [2], since this alloy is a direct-gap semiconductor and its band gap can be varied from 0.7 to 3.43 eV depending on the In content in the alloy [3]. However, because of a lack of proper substrates, it is hard to synthesize high-quality epitaxial InGaN layers, since there is a considerable difference between InGaN and other semiconductor materials in terms of the lattice constant and the coefficient of thermal expansion. This difference is responsible for the formation of a high density of defects of various types in InGaN layers. At the same time, the substantial difference between the interatomic distances in InN and GaN causes a discontinuity of the miscibility at an In content of ~0.4–0.6 in bulk InGaN [4, 5]. One of the methods of solving the above-mentioned problems is to synthesize nonplanar InGaN nanostructures. Due to the developed morphology
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