Synthesis of novel organotin(IV) complex for multiple applications: as biologically potent and single molecular precurso
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ORIGINAL PAPER
Synthesis of novel organotin(IV) complex for multiple applications: as biologically potent and single molecular precursor Arshad Farooq Butt1,2 · Muhammad Aamir2 · Moazzam Hussain Bhatti1 · Muhammad Aziz Choudhary2 · Jamil Ahmad3 · Muhammad Nawaz Tahir4 Received: 8 December 2019 / Accepted: 31 July 2020 © Iranian Chemical Society 2020
Abstract This work reports a facile solution-based synthesis of novel single molecular precursor (SMP), triphenylstannyl 4-((4-bromophenyl) amino)-4-oxobut-2-enoate complex (2). The as-prepared SMP was characterized by single crystal X-rays diffraction, elemental analysis, 1H NMR, 13C NMR and Mass spectrometry. The thermal properties of as-prepared SMP were assessed by thermogravimetric analysis and differential calorimetry. The as-prepared complex showed excellent DNA binding property in vivo experiments. The as-prepared complex (2) also revealed good antileishmanial and anticancer properties. Lastly, high-quality transparent SnO2 thin films were obtained by aerosol-assisted chemical vapors deposition on common window glass. The morphological and structural studies of as-deposited thin films were performed by XRD and FE-SEM. Keywords SnO2 · Thin films · Organotin · AACVD · Single crystal
Introduction Single molecular precursor (SMP) route has emerged a viable, alternative low-cost way to grow binary, ternary or quaternary phase low-dimensional inorganic materials [1–3]. Metal chalcogenides and metal oxide’s particles/thin films of critical dimension 1–100 nm have been successfully grown. Unlike other methods, this approach involves the use of Electronic supplementary material The online version of this article (https://doi.org/10.1007/s13738-020-02027-5) contains supplementary material, which is available to authorized users. * Arshad Farooq Butt [email protected] * Moazzam Hussain Bhatti [email protected] 1
Department of Chemistry, Allama Iqbal Open University, Islamabad, Pakistan
2
Materials Laboratory, Department of Chemistry, Mirpur University of Science and Technology (MUST), Mirpur 10250, AJK, Pakistan
3
National Center for Nanotechnology, Department of Metallurgy and Material Engineering, Pakistan Institute of Engineering and Applied Sciences, Islamabad, Pakistan
4
Department of Physics, University of Sargodha, Sargodha, Punjab, Pakistan
moister and thermally stable “precursor” to deposit impurity free material [4]. A number of organometallic and metalloorganic alkoxide precursors of Sn have been used to deposit tin oxide thin films using chemical vapor deposition method [5], including dimethyltindichloride (CH3)2SnCl2, monobutyltintrichloride (n–C4H9SnCl3), Me4Sn, Et4Sn, Me2Sn(NMe)2, Bu2Sn(O2CMe)2, Sn(O2CMe)2, Sn(NMe)2, crown ethers and (n–C4H9)2Sn(CH3COCHCOCH3)2) [5–7]. The limitation of these precursors is that they need very high-decomposition temperature to yield SnO2. The deposited material always contains halide contamination which are harmful for electronic properties of SnO2. Furthermore, organometallic
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