Temperature Dependence of Bound Exciton Emissions in GaN

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Ames, IA 50011 d)School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 e)Emcore Corporation, Somerset, NJ 08873 Work initiated when ZCF was with Emcore Corp. initiated when SER was with Emory University Cite this article as: MRS J. Nitride Semicond. Res. 4S1, G6.47 (1999) ABSTRACT The dissociation channels of two prominent bound exciton complexes in wurtzite GaN thin films are determined via an extensive temperature dependent photoluminescence study. The shallow donor bound exciton dissociation at low temperatures (T •

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Temperature Dependence of Bound Exciton Emissions in GaN

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