The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-ty
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The determination of the temperature and voltage dependence of the main device parameters of Au/7%Grdoped PVA/n-GaAs-type Schottky Diode (SD) E. Evcin Baydilli1, S¸ . Altındal2, H. Tecimer3, A. Kaymaz1, and H. Uslu Tecimer4,*
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Electric and Electronic Engineering Department, Engineering Faculty, Karabuk University, Karabuk, Turkey Physics Department, Science Faculty, Gazi University, Ankara, Turkey 3 Electrical Engineering Department, Technology Faculty, Karabuk University, Karabuk, Turkey 4 Medical Engineering Department, Engineering Faculty, Karabuk University, Karabuk, Turkey 2
Received: 10 May 2020
ABSTRACT
Accepted: 12 June 2020
There are several methods used to obtain the basic diode parameters that affect the diode quality of Schottky diodes (SD) such as ideality factor (n), barrier height (UBo), and series resistance (Rs). In this study, it is aimed to compare the results using Ohm’s law, Thermionic Emission theory (TE), Norde and CheungCheung functions. The I–V measurement of the Au/7%Gr-doped PVA/n-GaAs type SD was taken in the range of 80–360 K in 20 K steps. Considering that each method is effective in the different voltage region of the I–V curve and the parameters are strongly voltage-dependent, the results are compatible with each other. Also, the interface states (Nss) were calculated with and without Rs for each temperature value, and it was attained that the effect of Rs reduced Nss values by almost 1 degree. This result reveals the importance of the Rs parameter for SDs. As a result, it is plainly represented that the basic diode parameters n, Rs and UBo values are strongly dependent on temperature and voltage, and affected by barrier inhomogeneity and surface states.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction The role of semiconductor devices in the development of today’s technology cannot be ignored. GaAs semiconductor is widely used in electronic applications due to its high mobility, ability to be used as a semiconductor base material, high resistivity and radiation resistance. Owing to its electronic
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https://doi.org/10.1007/s10854-020-03799-5
properties, it is advantageous to use in integrated circuit elements, optoelectronic devices, low and high-frequency circuit elements [1–3]. Therefore, to understand the electrical characteristics of MetalSemiconductor (MS), Metal–Insulator-Semiconductor (MIS) and Metal–Polymer-Semiconductor (MPS)-type Schottky Diodes (SDs) prepared by GaAs semiconductor, it is important to examine the current-
J Mater Sci: Mater Electron
conduction mechanisms (CCMs) not only at room temperature but also at low temperatures [4]. The factors such as diffusion in the metal-semiconductor interface in SDs, interface states (Nss), leakage current (Io), series resistance (Rs) and short circuit resistance (Rsh) are factors that affect the device performance [5]. Thus, forming a thin insulating layer between the metal and semiconductor prevents the leakage curren
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