The Double Donor Issue of the EL2 Defect in GaAs.
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THE DOUBLE DONOR ISSUE OF THE EL2 DEFECT IN GaAs. M. 0. MANASREH * and G. J. BROWN** * Electronic
Technology laboratory (WRDC/ELRA), Wright Research and Development
Center, Wright-Patterson Air Force Base, Ohio 45433-6543. ** Materials Laboratory (WRDC/MLPO), Wright Research and Development Center, Wright-Patterson Air Force Base, Ohio 45433-6533.
ABSTRACT Photo-induced changes in the infrared (IR) absorption spectrum of the EL2 defect in undoped and lightly alloyed unannealed GaAs materials grown by the liquid-encapsulated Czochralski technique were observed under a monochromatic light irradiation. These changes were attributed to the change of the charge states of EL2. The spectrum which is believed to be due to the charged EL2 exhibits a complex structure with two peaks at 1.07 and 1.32 eV and a shoulder at 0.94 eV. The EL2+/2 + -- EL2 0/+ and EL20 /+ -- EL2+/2 + transitions were obtained by illuminating the sample with 0.7 < hv < 0.95 eV and 1.3
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