The Effect of CZTS Ultrathin Film Thickness on the Electrical Characteristic of CZTS/Si Heterojunction Solar Cells in th
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ORIGINAL PAPER
The Effect of CZTS Ultrathin Film Thickness on the Electrical Characteristic of CZTS/Si Heterojunction Solar Cells in the Darkness and under the Illumination Conditions Serap Yiğit Gezgin 1 & Amina Houimi 1 & Bedrettin Mercimek 2 & Hamdi Şükür Kiliç 1,3,4 Received: 1 October 2020 / Accepted: 16 November 2020 # Springer Nature B.V. 2020
Abstract In this study, Ag/CZTS/Si/Al heterojunction solar cells were produced depending on some parameters of CZTS ultrathin active film layers grown on a n-Si wafer by PLD technique. CZTS ultrathin films have been produced as a function of the number of laser pulses and then annealed in a tube oven as a function of sulfurization temperature. The crystal structure, the optical and morphological properties of grown&annealed CZTS ultrathin films were examined by XRD, UV-vis spectra, AFM, respectively. The electrical characteristics of CZTS heterojunction solar cell in the darkness, which were investigated by the conventional J-V Method, Cheung Cheung Method and Norde Method. As the thickness of CZTS ultrathin films increased, the forward current of CZTS heterojunctions increased and their ideality factor, serial resistance and barrier height decreased. Also, the efficiency of Ag/ CZTS/Si/Al heterojunction solar cells have been examined and characterised as a function of CZTS ultrathin film thickness under the illumination conditions. J-V curves of CZTS heterojunction solar cells were determined under AM 1.5 solar radiation in 80 MW/cm2, all CZTS heterojunction solar cells have exhibited the photovoltaic behaviour. Jsc, Voc, FF, η parameters of Ag/ CZTS/Si/Al heterojunction solar cells were measured, interpreted and compared with each other. Keywords CZTS . PLD . Heterojunction . Solar cell . Ultrathin film . Efficiency . Ideality factor . Serial resistivity
1 Introduction The generation of thin film solar cells based on some common materials such as Copper Indium Sulphur (CuInS), Cadmium Tellur (CdTe), Copper Indium Gallium Sulphur (CIGS), Copper Zinc Tin Sulphur (CZTS) in the field of photovoltaic technology have taken a valuable attention and a number of studies have been given to literature on these solar cells. In particular, although CdTe and CIGS solar cells exhibit good * Hamdi Şükür Kiliç [email protected] 1
Faculty of Science, Department of Physics, University of Selçuk, 42031, Selçuklu, Konya, Turkey
2
Ahmet Keleşoğlu Education Faculty, Chemistry Education Department, Necmettin Erbakan University, Meram, Konya, Turkey
3
Directorate of High Technology Research and Application Center, University of Selçuk, 42031, Selçuklu, Konya, Turkey
4
Directorate of Laser Induced Proton Therapy Application and Research Center, University of Selçuk, 42031, Selçuklu, Konya, Turkey
photovoltaic properties, these materials used as absorber layer for these solar cells containing toxic elements such as Ga, Cd and also some expensive elements such as In and Te [1, 2]. Cu2ZnSnS4 (CZTS), which is promising some important properties similar to CIGS, can replace
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