The Effect of Growth Temperature on the Microstructure of MOVPE AIN/Si (111)
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es. Soc. Symp. Proc. Vol. 482 © 1998 Materials Research Society
tion results are presented here. Cross sectional and plan-view TEM samples were prepared by the tripod polishing technique. 4 Final thinning was achieved by Ar+ ion milling at 3 kV with the sample held in a liquid nitrogen cooled holder. JEOL 200CX and Philips CM200-UT microscopes operated at 200kV were used to obtain dynamical two-beam bright field, weak-beam dark-field, and the high-resolution phase contrast (HREM) images of the AIN film and the A1N/Si interfacial microstructure.
SINGLE / POLY- CRYSTALLINITY & ORIENTATION RELATIONSHIPS The SAD patterns in Figure 1 show that single crystalline films are first achieved at the relatively high growth temperature of 1175'C. RHEED studies (not shown) also indicated epitaxy at this temperature only. The epitaxial relationship is (0001)AINII(1l l)si ANIIsi and
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