The Effect of H 2 Dilution on Thin Film SiN Deposited by Hot Wire Cvd Using SiH 4 and NH 3 Gas Mixtures
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THE EFFECT OF H2 DILUTION ON THIN FILM SiN DEPOSITED BY HOT WIRE CVD USING SiH4 AND NH3 GAS MIXTURES A. C. Dillon, L. Gedvillas, D. L. Williamson*, J. Thiesen, J. D. Perkins, and A. H. Mahan NREL, Golden CO 80401 * Colo. School of Mines, Golden CO 80401 ABSTRACT The structure of thin film SiN, deposited by the hot wire chemical vapor deposition (HWCVD) technique using SiH4 and NH3 gas mixtures, has been examined as a function of the amount of H2 dilution of the gas mixture. For NH3/SiH4 gas ratios > 0.5/1, all films are a-SiN:H. While H2 dilution does not change the basic film structure, in that the films are amorphous with all dilutions, H2 dilution does increase the efficiency of NH3 dissociation in the gas phase, and causes a further reduction in the already small amount of N-H bonding in a-SiN:H films deposited by HWCVD. For NH3/SiH4 gas ratios typically
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