The Effects of Deposition temperature on the Growth of Copper films produced by low pressure metal-organic chemical vapo
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S.S. YOON*, S.W. KANG** AND S.S. CHUN** *Hyundai Electronics Industries Co., Ltd., Icheon, Kyungki-do, Korea **Korea Advanced Institute of Science and Technology, 373-1, Kusung-dong, Yusung-gu, Taejon, 305-701, Korea
ABSTRACT
Copper was deposited onto TiN by low pressure metal-organic chemical vapour deposition, using hfacCu(I)TMVS and argon carrier gas. The effects of the deposition temperature on the growth of copper films were investigated by observing the surface morphology and the cross sectional morphology of copper films. At the initial stage of growth, copper films tended to have the island-like growth mode, irrespective of the deposition temperatures. It was also observed that the aspect ratio(=height to width) of the islands gradually increased as the deposition temperature increased. The poorer movability of the copper atoms at the higher deposition temperature was evaluated on the basis of hindering effect by the following copper deposits.
INTRODUCTION As the device feature size goes down to the sub-half micrometer, copper has been widely considered as an attractive material for the interconnection lines. Compared with aluminum based alloy, which is now being used for the interconnection lines, copper has the lower bulk resistivity (1.67 Pt Q2 cm) and higher melting point (1083 C). These properties can lead to improvement on the RC time delay and electromigration failure of the interconnection lines[ I]. Among the methods to deposit the copper films, the low pressure metal-organic chemical vapour deposition (LPMOCVD) is being most intensively studied because of its conformal deposition ability at reduced temperatures. By now, there have been many reports on the LPMOCVD of copper films which have the high degrees of perfection, conformal step coverage, low resistivity, and so on[2-6]. However, relatively little work has been carried out to elucidate the reason why those properties could be obtained. Furthermore, though the growth mode of copper films may greatly influence on those properties, there is still limited work that has been undertaken to examine the effects of deposition variables on the growth of copper films. In this study, it is intended to examine the effects of deposition temperature on the growth of copper films deposited on TIN layers with the hfacCu(I)TMVS(hexafluoroacetylacetonate.Cu+l. trimethylvinylsilane) and argon carrier gas by LPMOCVD. The effects of deposition temperature on the growth of copper films are examined from the kinetic rate difference between the dispropotionation reaction of hfacCu(I)TMVSs and the surface diffusion of copper atoms. 315 Mat. Res. Soc. Symp. Proc. Vol. 391 01995 Materials Research Society
EXPERIMENTAL
Figure 1 shows a schematic diagram of the LPMOCVD apparatus for deposition of the copper films in this study. The susceptor was heated by the resistant heater and the temperature was measured by a K-type thermocouple which was directly in contact with the susceptor. The (11 )TiN substrates were prepared by sputtering on the p-type(100) silicon sing
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