The Influence of Hydrogen on the Electrical and Photoelectric Properties of Photodiodes Based on Indium Monoselenide
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The Influence of Hydrogen on the Electrical and Photoelectric Properties of Photodiodes Based on Indium Monoselenide S.I. Drapak, V.M. Kaminskii, Z.D. Kovalyuk and V.V. Netyaga I.M. Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., 58001, Chernivtsi, Ukraine. ABSTRACT Influence of hydrogen intercalation on indium monoselenide is investigated measuring electrical properties of based on it such photosensitive structures as metal-insulatorsemiconductor (MIS) and Mott diode (MD). It is established that intercalation of the basic semiconductor with hydrogen leads to the improvement of diodic properties of the MIS structures whereas those for the MD structure becomes worse. For the both structures charge transfer mechanisms are analyzed on the basis of their band diagrams. INTRODUCTION In this paper we present the results of investigations of insertion of hydrogen into p-type conductivity crystals of InSe during intercalation [1] on electrical properties of Sn - p-InSe contacts. Two types of the contacts were used in our experiments. In the first case Sn - p-InSe contact was a tunnel metal-insulator-semiconductor (MIS) structure where a film of wide-gap γIn2Se3 with Eg=2.0 еВ [2] of a thick d ∼ 150 Å was used as a dielectric. The technology of preparation and analysis of charge transfer mechanisms of such the structures are described in [3]. The single difference of these structures from those described in [3] is using a back indium contact what resulted in the fact that the current-voltage (C–V) characteristic of this contact had not a diodic behavior (Fig. 1, curve 1) and could be described in the framework of the model including two diodes connected in series in the opposite directions [4]. In the second case the formation of semi-transparent tin films has been carried out by a method of vacuum deposition onto the semiconductor substrates at room temperature what ruled out the appearance of an oxide phase on the surface of InSe. Rectification at such the contact (Fig. 2, curve 1) takes place because of the formation on the base semiconductor surface of a high-resistive layer of InSe caused by diffusion of tin [5], i.e. the Sn – p-InSe contact was a classical Mott’s diod (MD) [6]. It was confirmed by the fact that its capacitance was, in fact, independent of applied bias [6]. At preparation of such the structures silver was used as a back contact material. The ohmicity of the p-InSe-Ag contact was kept over all the range of used current densities.
EXPERIMENTAL DETAILS Intercalation of the base semiconductor in the structures of the both types has been carried out by the method of “drawing” electrical field from a 0.1 M solution of HCl at potentials below the potential of hydrogen reduction in this solution (ϕ = 0.3 V with respect to a AgCl electrode). The concentration of the inserted protons was determined from the electricity amount transferred through an intercalation cell by measuring current density and time of the
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