The Microstructure of Metalorganic-Chemical-Vapor-Deposition GaN on Sapphire
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MRS BULLETIN/JULY 1997
The High Dislocation Density of GaN on Sapphire Throughout the history of semiconductors, much effort has been devoted to improving the perfection of the basic
semiconductor crystal and in particular to reducing the concentration of dislocations. In silicon-based metaloxide-semiconductor devices, dislocations reduce the gate oxide breakdown voltage and increase gate leakage currents. 3 In GaAs- and InP-based LEDs and lasers, dislocations degrade optoelectronic as well as electronic performance.4 When injected carriers recombine in the vicinity of dislocations, the recombination energy tends to heat the crystal rather than produce light. This nonradiative recombination appears as dark spots and dark lines in the otherwise bright emitting regions of these devices, reducing their intensity and their reliability. In today's high-quality semiconductors such as silicon and GaAs, dislocation densities of
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